Results 51 to 60 of about 812 (165)

On the Electron Transport in Simplified IBC‐SHJ Solar Cells With MoOx Blanket Layer

open access: yesProgress in Photovoltaics: Research and Applications, Volume 34, Issue 5, Page 523-532, May 2026.
In this work, we present a study of electron transport through a novel (n)nc‐Si:H/MoOx stack to improve the understanding and performance of simplified IBC‐SHJ solar cells with MoOx blanket layer. The champion solar cell fabricated with the optimized contact stack and metalized with copper electroplating enables efficiencies beyond 23.5%.
Katarina Kovačević   +6 more
wiley   +1 more source

Laser‐Enabled Nanopinholes for Silicon Solar Cells with Polycrystalline Si/SiOx Passivating Contacts

open access: yesSolar RRL, Volume 10, Issue 8, 27 April 2026.
Conductive nanoscale pinholes are created by selective heating of pyramid tips on randomly textured silicon via pulsed laser irradiation. Due to heat concentration at the pyramid tips, the dielectric passivating layer is selectively opened at the pyramid tips.
Dirk W. Steyn   +12 more
wiley   +1 more source

High channel mobility at SiO2/GaN interface with different tilt angle trench sidewalls formed by wet etching treatment

open access: yesAPL Materials
The development of low-resistance Gallium nitride (GaN) trench metal-oxide semiconductor (MOS) channels is required. Since the trenches are formed by dry etching, their surfaces are inevitably exposed to plasma, leading to plasma-induced damage ...
Hirohisa Hirai   +3 more
doaj   +1 more source

Tin‐Oxo Nanocluster Extreme UV Photoresists Equipped with Chemical Features for Atmospheric Stability and High EUV Sensitivity

open access: yesAdvanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku   +18 more
wiley   +1 more source

Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques

open access: yesSensors, 2011
A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate.
Ming-Zhi Yang   +2 more
doaj   +1 more source

Ultrafast Photocatalytic Wettability Switching in Substrate‐Interface Tailored Titanium Dioxide Thin Films

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 7, 7 April 2026.
This study demonstrates ultrafast photocatalytic wettability switching in TiO2 thin films by tailoring substrate doping and interface oxides. Enhanced switching rates and hemiwicking effects are achieved through optimized material stacks and nanostructuring.
Rucha A. Deshpande   +6 more
wiley   +1 more source

Ultrathin Freestanding MoSiN Nanocomposite Membranes as Efficient High‐Temperature Mid‐Infrared Thermal Emitters

open access: yesSmall, Volume 22, Issue 17, 20 March 2026.
Ultrathin freestanding MoSiN nanocomposite membranes are developed as stable and efficient mid‐infrared emitters for gas sensing under extreme thermal conditions. A 12 nm‐thick membrane combines intermetallic phases for enhanced IR absorption with a dielectric phase for mechanical stability.
Reethu Sebastian   +3 more
wiley   +1 more source

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

open access: yesNanomaterials, 2018
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS).
Zhe Ma   +10 more
doaj   +1 more source

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

open access: yesphysica status solidi (a), Volume 223, Issue 4, 24 February 2026.
We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li   +17 more
wiley   +1 more source

Surface Texturing with Hemispherical Cavities to Improve Efficiency in Silicon Solar Cells

open access: yesInternational Journal of Photoenergy, 2012
Improvement of solar-cell efficiency at a minimum possible cost addition is constantly sought, and this is often achieved at incremental percentage steps.
D. W. de Lima Monteiro   +3 more
doaj   +1 more source

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