Results 71 to 80 of about 3,921 (200)
We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li +17 more
wiley +1 more source
Surface roughness and chemistry of novolak‐based grayscale resists are dependent on both exposure dose and post‐exposure thermal treatment. The observed trends align with the viscoelastic phase separation model and underscore the need to consider both thermodynamic and kinetic factors in resist processing. By tailoring thermal treatment, it is possible
Rahul Singh +4 more
wiley +1 more source
The development of low-resistance Gallium nitride (GaN) trench metal-oxide semiconductor (MOS) channels is required. Since the trenches are formed by dry etching, their surfaces are inevitably exposed to plasma, leading to plasma-induced damage ...
Hirohisa Hirai +3 more
doaj +1 more source
Synthesis and Property of Tannic Acid Derivatives and Their Application for Extreme Ultraviolet Laser Lithography System [PDF]
We synthesized tannic acid derivatives with pendant cyclohexyl acetal moieties (TA-CVEn), butyl acetal moieties (TA-BVEn), and adamantyl ester moieties (TA-ADn) by the reaction of tannnic acid (TA) with cyclohexyl vinyl ether (CVE), butyl vinyl ether ...
Kozawa Takahiro +10 more
core +2 more sources
This study demonstrates an aluminum‐based hybrid photoresist synthesized via molecular layer deposition (MLD) using trimethylaluminum and hydroquinone. The resist achieves sub‐20 nm resolution and virtually infinite silicon etch selectivity, enabling 40 nm‐wide, micrometer‐tall nanostructures.
Won‐Il Lee +8 more
wiley +1 more source
Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques
A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate.
Ming-Zhi Yang +2 more
doaj +1 more source
Kajian Mengenai Kebersandaran Pembentukan Keadaan Potong Bawah Penjuru Terhadap Jenis Larutan Pemunar dalam Penghasilan Diafram Beralun Silikon [PDF]
Kertas kerja ini membentangkan hasil kajian simulasi mengenai kesan jenis larutan pemunar ke atas keadaan potong bawah penjuru yang terhasil pada struktur-struktur penjuru cembung diafram beralun silikon (l00).
Majlis, Burhanuddin Yeop +1 more
core
Tunable Patterned Blue Phase Liquid Crystals Based on Lithographic Process Technology
A patterned blue phase liquid crystal device with electrically driven, localized bistability is demonstrated using a cost‐efficient photolithographic dual‐alignment process. The device switches between a high‐contrast patterned state and a uniform reflective state.
Jia‐Yu Cao +6 more
wiley +1 more source
Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS).
Zhe Ma +10 more
doaj +1 more source
Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon +4 more
wiley +1 more source

