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Highly Selective Isotropic Etching of Si to SiGe Using CF<sub>4</sub>/O<sub>2</sub>/N<sub>2</sub> Plasma for Advanced GAA Nanosheet Transistor. [PDF]
Nanomaterials (Basel)Li J, Sun X, Huang Z, Zhang DW.
europepmc +1 more source
Controlling the Dissolution Behavior of (Meth)acrylate-Based Photoresist Polymers in Tetramethylammonium Hydroxide by Introducing Adamantyl Groups. [PDF]
Materials (Basel)Kim J +6 more
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SiO2 Etching Rate Control of TMAH
IEEJ Transactions on Sensors and Micromachines, 1998 openaire +1 more source
Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution
Journal of Microelectromechanical Systems, 2010 Anisotropic etching with tetramethylammonium hydroxide (TMAH) water solutions is a simple and CMOS-compatible way to obtain geometrical patterns in single-crystal silicon wafers. The fabrication of trenches and other features is although limited by the need to compensate convex corners which tend to be etched very fast.
Alvise Bagolini, Alessandro Faes
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TMAH etching of silicon and the interaction of etching parameters
Sensors and Actuators A: Physical, 1997Abstract A study of tetramethylammonium hydroxide (TMAH) etching of silicon and the interaction of etching parameters has been carried out. We find that the silicon etch rate increases as the TMAH concentration increases and it reaches a maximum at 4 wt.%. The etch rate of n-type silicon is found to be slightly higher than that of p-type silicon.
W K Choi, J T L Thong
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Silicon Etching Characteristics in Modified TMAH Solution
, 2019 In the present work, we have studied the etching characteristics of Si{100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH2OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet ...
Veerla Swarnalatha +2 more
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Experiments on anisotropic etching of Si in TMAH
Solar Energy Materials and Solar Cells, 2001Abstract Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70°C, 80°C and 90°C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid
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Optimization of TMAH etching for MEMS
SPIE Proceedings, 1999 Tetra-methyl ammonium hydroxide (TMAH) is an anisotropic silicon etchant that is gaining considerable use in silicon sensor micromachining due to its excellent compatibility with CMOS processing, selectivity, anisotropy and relatively low toxicity, as compared to the more used KOH and EDP etchants.
S. BRIDA +7 more
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Sensors and Actuators A: Physical, 2020
Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
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Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
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Reaction Kinetics of Poly-Si Etching in TMAH Solution
Solid State Phenomena, 2021Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study.
Taegun Park, Sang Woo Lim
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