Results 101 to 110 of about 103,452 (148)

Microfabrication : using bulk wet etching with TMAH

, 2005
In November 2002 a Microfabrication Lab was established in the physics department of McGill University to support research in nanoscience and technology. At the same time, I arrived at McGill to begin my graduate study. So I was assigned to do research on microfabrication, especially bulk wet etching of silicon using TetraMethyl Ammonium Hydroxide ...
Duan, Xuefeng, 1981-
openaire   +2 more sources

Some of the next articles are maybe not open access.

Related searches:

Differences in anisotropic etching properties of KOH and TMAH solutions

Sensors and Actuators A: Physical, 2000
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon whose surface exhibited every crystallographic orientation, in order to evaluate the etching properties as a function of the orientation.
Mitsuhiro Shikida, Kazuo Sato, Kenji Tokoro, Daisuke Uchikawa   +3 more
exaly   +2 more sources

TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi, Min Yu, Shao Nan Wang, Hong Zhi Liu, Bao Hua Shi, An Qi Hu, Hong Du, Jin Yan Wang, Yu Feng Jin   +8 more
exaly   +2 more sources

Study of Under Etching Characters of Si (100) in Surfactant Added TMAH

Key Engineering Materials, 2011
This work focuses on the etching characteristic of (100) silicon wafer in surfactant added tetramethyl-ammonium-hydroxide (TMAH:(CH3)(4)NOH) solution.
Yi Long Hao
exaly   +2 more sources

Boron Etch-stop In TMAH Solutions

Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1996
Abstract Etch rates of 〈100〉 single-crystal silicon in tetramethyl ammonium hydroxide (TMAH) solutions have been measured as a function of boron doping concentration with the purpose of studying the feasibility of an etch-stop. The boron concentration has been varied up to 2.5 × 1020 cm−3.
Elin Steinsland, Martin Nese, Anders Hanneborg, Ralph W. Bernstein, Halle Sandmo, Gjermund Kittilsland   +5 more
openaire   +1 more source

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Solid-State Electronics, 2018
International audienceNormally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching.
Junhyeok Lee, Jung-Hee Lee, In Man Kang
exaly   +2 more sources

Anisotropic etching of silicon in TMAH solutions

Sensors and Actuators A: Physical, 1992
Abstract Detailed characteristics of tetramethyl ammonium hydroxide (TMAH, (CH3)4NOH) as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% and temperatures from 60 to 90 °C have been studied. The etch rates of (100) and (110) crystal planes decrease with increasing concentration.
Osamu Tabata, Ryouji Asahi, Hirofumi Funabashi, Keiichi Shimaoka, Susumu Sugiyama   +4 more
openaire   +1 more source

Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon

Microelectronics Journal, 2006
Abstract High precision bulk micromachining of silicon is a key process step to shape spatial structures for fabricating different type of microsensors and microactuators. A series of etching experiments have been carried out using KOH, TMAH and dual doped TMAH at different etchant concentrations and temperatures wherein silicon, silicon dioxide and ...
Kanishka Biswas, S. Kal
openaire   +1 more source

TMAH/IPA anisotropic etching characteristics

Sensors and Actuators A: Physical, 1993
The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solutions is their full compatibility with IC technologies. In this work a new etching system of TMAH/IPA (isopropyl alcohol) is suggested. The influence of the addition of IPA to TMAH solutions on their etching characteristics is presented.
Merlos Domingo, Ángel, Acero Leal, María Cruz, Bao, Min-Hang, Bausells, Joan, Esteve i Tintó, Jaume   +4 more
openaire   +2 more sources

Silicon anisotropic etching of TMAH solution

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570), 2002
Detailed characteristics of tetramathyl ammonium hydroxide (TMAH, (CH/sub 3/)/sub 4/ NOH) as a silicon anisotropic etching solution with various concentrations from 5 to 40 wt% and temperatures between 60 to 90/spl deg/C have been studied. The etching of (100) crystal decreases with increasing concentration and decreasing temperature.
W. Sonphao, S. Chaisirikul
openaire   +1 more source