Results 121 to 130 of about 812 (165)

Silicon anisotropic etching of TMAH solution

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570), 2002
Detailed characteristics of tetramathyl ammonium hydroxide (TMAH, (CH/sub 3/)/sub 4/ NOH) as a silicon anisotropic etching solution with various concentrations from 5 to 40 wt% and temperatures between 60 to 90/spl deg/C have been studied. The etching of (100) crystal decreases with increasing concentration and decreasing temperature.
W. Sonphao, S. Chaisirikul
openaire   +1 more source

Differences in anisotropic etching properties of KOH and TMAH solutions

Sensors and Actuators A: Physical, 2000
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon whose surface exhibited every crystallographic orientation, in order to evaluate the etching properties as a function of the orientation.
Mitsuhiro Shikida
exaly   +2 more sources

Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

Journal of Microelectromechanical Systems, 2010
Anisotropic etching with tetramethylammonium hydroxide (TMAH) water solutions is a simple and CMOS-compatible way to obtain geometrical patterns in single-crystal silicon wafers. The fabrication of trenches and other features is although limited by the need to compensate convex corners which tend to be etched very fast.
Alvise Bagolini
exaly   +3 more sources

TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi
exaly   +2 more sources

Etched profile control in anisotropic etching of silicon by TMAH+Triton

Journal of Micromechanics and Microengineering, 2012
The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and ...
Prem Pal, M A Gosálvez, K Sato
openaire   +2 more sources

Silicon anisotropic etching in KOH and TMAH with modified surface tension

Procedia Chemistry, 2009
AbstractEtching rates and morphologies of Si wafers with different crystallographic orientations etched in pure TMAH and TMAH with isopropyl alcohol have been analysed. IPA addition caused significant improvement in the morphology of some etched surfaces. Similar effects had been already observed in KOH+IPA solutions.
Irena Zubel
exaly   +2 more sources

Silicon etching characteristics for the TMAH based solution with additives

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C.
Ki-Wha Jun, Jung-Sik Kim
openaire   +1 more source

Evolution of hillocks during silicon etching in TMAH

Journal of Micromechanics and Microengineering, 2000
The evolution of hillocks on (100)-silicon etched in 4 wt% tetramethyl ammonium hydroxide is studied through a detailed examination of hillock size distribution and individual hillock features using low-voltage scanning electron microscopy. Silicon samples etched for periods of 1.5, 3 and 5 min show that the population of hillocks initially comprises ...
Thong, J.T.L., Luo, P., Choi, W.K., Tan, S.C.   +3 more
openaire   +1 more source

A Si3N4 Tube Formed Using TMAH Etching

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In this paper, micro-tube fabricated from SiO2/Si3N4 strained composite structures using a self-scrolling procedure is presented. This fabrication is a self-organization process using stress of bifilm. This technique is based on self-rolling of a thin highly strained SiO2/ Si3N4 bifilm detached from the substrate by TMAH selective etching. The material
Huijun Chen, Dacheng Zhang
openaire   +1 more source

Formation of pyramids at surface of TMAH etched silicon

Applied Surface Science, 1999
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Bai, Y., Tan, C.M., Chua, T.H.   +5 more
openaire   +1 more source