Results 121 to 130 of about 103,452 (148)

Encapsulation of naked dies for bulk silicon etching with TMAH

Microelectronics Reliability, 2002
Abstract Because of the increasing number of metal levels within a semiconductor device and the ongoing transition to new package types failure analysis from the back side of a die becomes necessary. A useful chemical for bulk silicon removal is tetra-methyl-ammonium-hydroxide (TMAH). Because of the aggressive etch conditions, the edges of naked dies
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On hillocks generated during anisotropic etching of Si in TMAH

Journal of Microelectromechanical Systems, 1996
Hillocks on etched Si{100} surfaces produced by anisotropic etching are a common irritant in the creation of micromachined devices. Close inspection of typical pyramidal hillock shapes reveals that they are usually bounded by convex -directed edges and {111} or near-{111} planes.
L.M. Landsberger, S. Naseh, M. Kahrizi, M. Paranjape   +3 more
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Mask-Under-Etch Experiments of Si{110} in TMAH

Engineering Solutions for the Next Millennium. 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99TH8411), 2003
This work investigates the etching of {110} silicon at 80°C in TMAH at 25wt% and 12wt%. A wagonwheel pattern having 1" spokes is used, and the under-etched surfaces and inclination angles are observed in detail. Under-etched surfaces are often complex, composed of 2 or 3 facets, some smooth and some rough.
A. Pandy, L.M. Landsberger, M. Kahrizi
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Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch

2020 33rd International Vacuum Nanoelectronics Conference (IVNC), 2020
A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\mu\mathrm{A}$
Simon Edler, Josef Biba, Walter Hansch, Michael Bachmann, Felix Dusberg, Christoph Langer, Andreas Schels, Marinus Werber, Andreas Pahlke   +8 more
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Anisotropic etching of surfactant-added TMAH solution

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
The anisotropic silicon etching characteristics of surfactant-added tetramethyl ammonium hydroxide (TMAH) solution were investigated. It was found that the etch rate of the [110] crystal plane abruptly decreases by more than one order of magnitude and that the etch rate ratio of the etch rate of the [100] crystal plane to the etch rate of the [110 ...
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Investigations on the morphology of silicon surfaces anisotropically etched with TMAH

Materials Science and Engineering: B, 2000
Abstract The formation and transformation of hillocks during the anisotropic etching of (100) silicon are investigated. Hillocks start as pyramids and grow in size as the surface etches down. The main pyramid edges become bevelled in the process, and when the bevelling planes meet, 〈101〉 ledges are formed which propagate and transform the {111} faces
Thong, J.T.L., Bai, Y., Luo, P., Choi, W.K.   +3 more
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Wet Etching Behavior of Poly-Si in TMAH Solution

Solid State Phenomena, 2012
Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order ...
Hiroaki Takahashi, Masayuki Otsuji, Jim Snow, Farid Sebaai, Kenichiro Arai, Masanobu Sato, Soichi Nadahara   +6 more
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Anisotropic etching properties of silicon in KOH and TMAH solutions

MHA'98. Proceedings of the 1998 International Symposium on Micromechatronics and Human Science. - Creation of New Industry - (Cat. No.98TH8388), 2002
We investigated anisotropic etching properties of single-crystal silicon as a function of crystallographic orientations in order to fabricate a variety of 3D microstructures on silicon substrates. We measured etching rates for a number of crystallographic orientations using hemispherical specimens.
K. Tokoro, D. Uchikawa, M. Shikida, K. Sato   +3 more
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Comparison of anisotropic etching properties between KOH and TMAH solutions

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon on where surface whole crystallographic orientations appeared, in order to evaluate the etching properties as a function of the orientations. We carried out a series of the experiments using different concentrations of two
M. Shikida, K. Sato, K. Tokoro, D. Uchikawa   +3 more
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Characterisation of pyramid formation arising from the TMAH etching of silicon

Sensors and Actuators A: Physical, 1998
An investigation on the influence of etchant concentration, ambient temperature and wafer thermal history on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Tan, C.M., Chua, T.H., Bai, Y.   +5 more
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