Results 141 to 150 of about 812 (165)

Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch

2020 33rd International Vacuum Nanoelectronics Conference (IVNC), 2020
A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\mu\mathrm{A}$
Simon Edler, Josef Biba, Walter Hansch, Michael Bachmann, Felix Dusberg, Christoph Langer, Andreas Schels, Marinus Werber, Andreas Pahlke   +8 more
openaire   +1 more source

Electrochemical etch-stop in TMAH without externally applied bias

Sensors and Actuators A: Physical, 1996
Abstract This paper presents a method for electrochemical etch-stop without the use of an externally applied bias voltage. This greatly simplifies the etch process and enables batch fabrication to be achieved. The process is based on the formation of a wet battery when a gold-chrome/n-type silicon/TMAH construction is formed.
P.J. French, M. Nagao, M. Esashi
openaire   +1 more source

Surface roughness of single-crystal silicon etched by TMAH solution

Sensors and Actuators A: Physical, 2001
We investigated the surface roughness properties of single-crystal silicon etched by a TMAH water solution. We used a hemispherical specimen, in which all crystallographic orientation planes appeared on the surface, and made a map of the surface roughness distribution pattern.
Mitsuhiro Shikida, Takehiro Masuda, Daisuke Uchikawa, Kazuo Sato   +3 more
openaire   +1 more source

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

International Symposium for Testing and Failure Analysis, 2000
Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in
Mark Morris, James Mohr, Esteban Ortiz, Steven Englebretson   +3 more
openaire   +1 more source

Characterisation of pyramid formation arising from the TMAH etching of silicon

Sensors and Actuators A: Physical, 1998
An investigation on the influence of etchant concentration, ambient temperature and wafer thermal history on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Tan, C.M., Chua, T.H., Bai, Y.   +5 more
openaire   +1 more source

Optimization of (100)-Si TMAH etching for uncooled infrared detector

SPIE Proceedings, 2009
The influences of concentration of the Tetra-methyl ammonium hydroxide (TMAH) solution together with oxidizer additions were studied in order to optimize the anisotropic silicon etching in the development of a fabrication process for Ba 0.65 Sr 0.35 TiO 3 (BST) pyroelectric thin film infrared detectors.
Y. Shuai, C. G. Wu, W. L. Zhang, Y. R. Li, X. Z. Liu, J. Zhu   +5 more
openaire   +1 more source

Comparison of anisotropic etching properties between KOH and TMAH solutions

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon on where surface whole crystallographic orientations appeared, in order to evaluate the etching properties as a function of the orientations. We carried out a series of the experiments using different concentrations of two
M. Shikida, K. Sato, K. Tokoro, D. Uchikawa   +3 more
openaire   +1 more source

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Nanotechnology, 2010
Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold ...
Päivi, Sievilä, Nikolai, Chekurov, Ilkka, Tittonen   +2 more
openaire   +2 more sources

Study of Si(1 0 0) surfaces etched in TMAH solution

Sensors and Actuators A: Physical, 2001
Abstract Si(1 0 0) surfaces treated in a tetramethylammonium hydroxide (TMAH) solution at 70°C have been studied using spectroscopic ellipsometry (SE) and ex situ atomic force microscopy (AFM). The SE data indicate that surface native oxide is etched gradually and then lift-off in places with immersing in the solution. Since the solution attacks bulk
Kaoru Sakaino, Sadao Adachi
openaire   +1 more source

Fabrication of high aspect ratio AFM tips by surfactant added TMAH etching

Sensors and Actuators A: Physical
, Farheen Nasir
exaly   +2 more sources