Results 141 to 150 of about 3,921 (200)

Facile Y-type Micro Ag₂Se/MgAgSb flexible thermoelectric device based on lift-off technology. [PDF]

Sci Rep
Tian G, Shi W, Guo R, Guo R, Zhang W, Liu D, Xue C.   +6 more
europepmc   +1 more source

Microfabricated rGO/PANI Interdigitated Electrodes for Reference-Free, Label-Free pH Sensing on Flexible Substrates. [PDF]

Micromachines (Basel)
Sepehri Gohar M, Ozek EA, Tasdelen MC, Arman Kuzubasoglu B, Vaheb Y, Yapici MK.   +5 more
europepmc   +1 more source

Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography. [PDF]

ACS Omega
Cong X, Zhang S, Gao J, Cui X, Wu Y, Guo X, Hu R, Wang S, Chen J, Li Y, Yang G.   +10 more
europepmc   +1 more source

Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers. [PDF]

Micromachines (Basel)
Yang B, Sun H, Zhu K, Wang X.
europepmc   +1 more source

Uncooled, broadband terahertz bolometers using SOI MEMS beam resonators with piezoresistive readout. [PDF]

Microsyst Nanoeng
Zhang Y, Ebata K, Iimori M, Liu Q, Zhao Z, Takeuchi R, Li H, Maenaka K, Hirakawa K.   +8 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

TMAH etching of silicon and the interaction of etching parameters

Sensors and Actuators A: Physical, 1997
Abstract A study of tetramethylammonium hydroxide (TMAH) etching of silicon and the interaction of etching parameters has been carried out. We find that the silicon etch rate increases as the TMAH concentration increases and it reaches a maximum at 4 wt.%. The etch rate of n-type silicon is found to be slightly higher than that of p-type silicon.
Jtl Thong
exaly   +2 more sources

Experiments on anisotropic etching of Si in TMAH

Solar Energy Materials and Solar Cells, 2001
Abstract Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70°C, 80°C and 90°C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid
Jae Sung You, Donghwan Kim, Joo Youl Huh, Ho Joon Park, James Jungho Pak, Choon Sik Kang   +5 more
exaly   +2 more sources

Reaction Kinetics of Poly-Si Etching in TMAH Solution

Solid State Phenomena, 2021
Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study.
Tae Gun Park, Sang Woo Lim
exaly   +2 more sources