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Effect of cations on silicon anisotropic etching process in solutions containing TMAH and TMAH with tensioactive compounds

Sensors and Actuators A: Physical, 2020
Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
exaly   +2 more sources

Differences in anisotropic etching properties of KOH and TMAH solutions

Sensors and Actuators A: Physical, 2000
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon whose surface exhibited every crystallographic orientation, in order to evaluate the etching properties as a function of the orientation.
Mitsuhiro Shikida
exaly   +2 more sources

Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

Journal of Microelectromechanical Systems, 2010
Anisotropic etching with tetramethylammonium hydroxide (TMAH) water solutions is a simple and CMOS-compatible way to obtain geometrical patterns in single-crystal silicon wafers. The fabrication of trenches and other features is although limited by the need to compensate convex corners which tend to be etched very fast.
Alvise Bagolini
exaly   +3 more sources

TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi   +8 more
exaly   +2 more sources

Boron Etch-stop In TMAH Solutions

Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1996
Abstract Etch rates of 〈100〉 single-crystal silicon in tetramethyl ammonium hydroxide (TMAH) solutions have been measured as a function of boron doping concentration with the purpose of studying the feasibility of an etch-stop. The boron concentration has been varied up to 2.5 × 1020 cm−3.
Elin Steinsland   +5 more
openaire   +1 more source

Optimization of TMAH etching for MEMS

SPIE Proceedings, 1999
Tetra-methyl ammonium hydroxide (TMAH) is an anisotropic silicon etchant that is gaining considerable use in silicon sensor micromachining due to its excellent compatibility with CMOS processing, selectivity, anisotropy and relatively low toxicity, as compared to the more used KOH and EDP etchants.
S. BRIDA   +7 more
openaire   +2 more sources

Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon

Microelectronics Journal, 2006
Abstract High precision bulk micromachining of silicon is a key process step to shape spatial structures for fabricating different type of microsensors and microactuators. A series of etching experiments have been carried out using KOH, TMAH and dual doped TMAH at different etchant concentrations and temperatures wherein silicon, silicon dioxide and ...
Kanishka Biswas, S. Kal
openaire   +1 more source

Anisotropic etching of silicon in TMAH solutions

Sensors and Actuators A: Physical, 1992
Abstract Detailed characteristics of tetramethyl ammonium hydroxide (TMAH, (CH3)4NOH) as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% and temperatures from 60 to 90 °C have been studied. The etch rates of (100) and (110) crystal planes decrease with increasing concentration.
Osamu Tabata   +4 more
openaire   +1 more source

Microstructures etched in doped TMAH solutions

Microelectronic Engineering, 2000
Tetra-methyl ammonium hydroxide, or TMAH, is an anisotropic silicon etchant that is gaining more and more attention in the fabrication process of mechanical microstructures and device isolation, as an alternative to the more usual KOH and EDP etchants [1]: because of its high compatibility with conventional IC processes, due to the absence of metal ...
S. Brida   +7 more
openaire   +2 more sources

Silicon anisotropic etching of TMAH solution

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570), 2002
Detailed characteristics of tetramathyl ammonium hydroxide (TMAH, (CH/sub 3/)/sub 4/ NOH) as a silicon anisotropic etching solution with various concentrations from 5 to 40 wt% and temperatures between 60 to 90/spl deg/C have been studied. The etching of (100) crystal decreases with increasing concentration and decreasing temperature.
W. Sonphao, S. Chaisirikul
openaire   +1 more source

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