Results 131 to 140 of about 812 (165)

Si and SiGe Alloys Wet Etching Using TMAH Chemistry

ECS Transactions, 2013
From MEMS to CMOS applications, silicon wet anisotropic etching is nowadays considered as an interesting alternative to face new and various technological challenges. This paper focuses on the TMAH chemistry and its use for Si and Si1-xGex alloys etching.
Virginie Loup, Laurence Gabette, Marie-Christine Roure, Riadh Kachtouli, Marine Jourdan, Pascal Besson, Sebastien Petitdidier   +6 more
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An Experimental Study of TMAH Etching Silicon for MEMS

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper.
Feiyan Chen, Guoqing Hu, Baihai Wu
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Encapsulation of naked dies for bulk silicon etching with TMAH

Microelectronics Reliability, 2002
Abstract Because of the increasing number of metal levels within a semiconductor device and the ongoing transition to new package types failure analysis from the back side of a die becomes necessary. A useful chemical for bulk silicon removal is tetra-methyl-ammonium-hydroxide (TMAH). Because of the aggressive etch conditions, the edges of naked dies
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On hillocks generated during anisotropic etching of Si in TMAH

Journal of Microelectromechanical Systems, 1996
Hillocks on etched Si{100} surfaces produced by anisotropic etching are a common irritant in the creation of micromachined devices. Close inspection of typical pyramidal hillock shapes reveals that they are usually bounded by convex -directed edges and {111} or near-{111} planes.
L.M. Landsberger, S. Naseh, M. Kahrizi, M. Paranjape   +3 more
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Mask-Under-Etch Experiments of Si{110} in TMAH

Engineering Solutions for the Next Millennium. 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99TH8411), 2003
This work investigates the etching of {110} silicon at 80°C in TMAH at 25wt% and 12wt%. A wagonwheel pattern having 1" spokes is used, and the under-etched surfaces and inclination angles are observed in detail. Under-etched surfaces are often complex, composed of 2 or 3 facets, some smooth and some rough.
A. Pandy, L.M. Landsberger, M. Kahrizi
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Investigations on the morphology of silicon surfaces anisotropically etched with TMAH

Materials Science and Engineering: B, 2000
Abstract The formation and transformation of hillocks during the anisotropic etching of (100) silicon are investigated. Hillocks start as pyramids and grow in size as the surface etches down. The main pyramid edges become bevelled in the process, and when the bevelling planes meet, 〈101〉 ledges are formed which propagate and transform the {111} faces
Thong, J.T.L., Bai, Y., Luo, P., Choi, W.K.   +3 more
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Anisotropic etching of surfactant-added TMAH solution

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
The anisotropic silicon etching characteristics of surfactant-added tetramethyl ammonium hydroxide (TMAH) solution were investigated. It was found that the etch rate of the [110] crystal plane abruptly decreases by more than one order of magnitude and that the etch rate ratio of the etch rate of the [100] crystal plane to the etch rate of the [110 ...
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Wet Etching Behavior of Poly-Si in TMAH Solution

Solid State Phenomena, 2012
Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order ...
Hiroaki Takahashi, Masayuki Otsuji, Jim Snow, Farid Sebaai, Kenichiro Arai, Masanobu Sato, Soichi Nadahara   +6 more
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Silicon Etching Characteristics in Modified TMAH Solution

2019
In the present work, we have studied the etching characteristics of Si{100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH2OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet ...
Veerla Swarnalatha, Avvaru Venkata Narasimha Rao, Prem Pal   +2 more
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Anisotropic etching properties of silicon in KOH and TMAH solutions

MHA'98. Proceedings of the 1998 International Symposium on Micromechatronics and Human Science. - Creation of New Industry - (Cat. No.98TH8388), 2002
We investigated anisotropic etching properties of single-crystal silicon as a function of crystallographic orientations in order to fabricate a variety of 3D microstructures on silicon substrates. We measured etching rates for a number of crystallographic orientations using hemispherical specimens.
K. Tokoro, D. Uchikawa, M. Shikida, K. Sato   +3 more
openaire   +1 more source