Results 111 to 120 of about 812 (165)

TMAH etching of silicon and the interaction of etching parameters

Sensors and Actuators A: Physical, 1997
Abstract A study of tetramethylammonium hydroxide (TMAH) etching of silicon and the interaction of etching parameters has been carried out. We find that the silicon etch rate increases as the TMAH concentration increases and it reaches a maximum at 4 wt.%. The etch rate of n-type silicon is found to be slightly higher than that of p-type silicon.
J T L Thong, W K Choi
exaly   +2 more sources

Experiments on anisotropic etching of Si in TMAH

Solar Energy Materials and Solar Cells, 2001
Abstract Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70°C, 80°C and 90°C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid
James Jungho Pak
exaly   +2 more sources

Reaction Kinetics of Poly-Si Etching in TMAH Solution

Solid State Phenomena, 2021
Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study.
Sangwoo Lim
exaly   +2 more sources

Effect of cations on silicon anisotropic etching process in solutions containing TMAH and TMAH with tensioactive compounds

Sensors and Actuators A: Physical, 2020
Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
exaly   +2 more sources

Boron Etch-stop In TMAH Solutions

Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95, 1996
Abstract Etch rates of 〈100〉 single-crystal silicon in tetramethyl ammonium hydroxide (TMAH) solutions have been measured as a function of boron doping concentration with the purpose of studying the feasibility of an etch-stop. The boron concentration has been varied up to 2.5 × 1020 cm−3.
Elin Steinsland, Martin Nese, Anders Hanneborg, Ralph W. Bernstein, Halle Sandmo, Gjermund Kittilsland   +5 more
openaire   +1 more source

Optimization of TMAH etching for MEMS

SPIE Proceedings, 1999
Tetra-methyl ammonium hydroxide (TMAH) is an anisotropic silicon etchant that is gaining considerable use in silicon sensor micromachining due to its excellent compatibility with CMOS processing, selectivity, anisotropy and relatively low toxicity, as compared to the more used KOH and EDP etchants.
S. BRIDA, L. FERRARIO, V. GUARNIERI, F. GIACOMOZZI, B. MARGESIN, M. PARANJAPE, VERZELLESI, Giovanni, M. ZEN   +7 more
openaire   +2 more sources

Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon

Microelectronics Journal, 2006
Abstract High precision bulk micromachining of silicon is a key process step to shape spatial structures for fabricating different type of microsensors and microactuators. A series of etching experiments have been carried out using KOH, TMAH and dual doped TMAH at different etchant concentrations and temperatures wherein silicon, silicon dioxide and ...
Kanishka Biswas, S. Kal
openaire   +1 more source

Anisotropic etching of silicon in TMAH solutions

Sensors and Actuators A: Physical, 1992
Abstract Detailed characteristics of tetramethyl ammonium hydroxide (TMAH, (CH3)4NOH) as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% and temperatures from 60 to 90 °C have been studied. The etch rates of (100) and (110) crystal planes decrease with increasing concentration.
Osamu Tabata, Ryouji Asahi, Hirofumi Funabashi, Keiichi Shimaoka, Susumu Sugiyama   +4 more
openaire   +1 more source

Microstructures etched in doped TMAH solutions

Microelectronic Engineering, 2000
Tetra-methyl ammonium hydroxide, or TMAH, is an anisotropic silicon etchant that is gaining more and more attention in the fabrication process of mechanical microstructures and device isolation, as an alternative to the more usual KOH and EDP etchants [1]: because of its high compatibility with conventional IC processes, due to the absence of metal ...
S. Brida, M. Paranjape, G. Pignatel, Faes, Alessandro, Guarnieri, Vittorio, Giacomozzi, Flavio, Margesin, Benno, Zen, Mario   +7 more
openaire   +2 more sources