Results 161 to 170 of about 3,921 (200)

Etched profile control in anisotropic etching of silicon by TMAH+Triton

Journal of Micromechanics and Microengineering, 2012
The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and ...
Prem Pal, M A Gosálvez, K Sato
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Silicon etching characteristics for the TMAH based solution with additives

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C.
Ki-Wha Jun, Jung-Sik Kim
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Evolution of hillocks during silicon etching in TMAH

Journal of Micromechanics and Microengineering, 2000
The evolution of hillocks on (100)-silicon etched in 4 wt% tetramethyl ammonium hydroxide is studied through a detailed examination of hillock size distribution and individual hillock features using low-voltage scanning electron microscopy. Silicon samples etched for periods of 1.5, 3 and 5 min show that the population of hillocks initially comprises ...
Thong, J.T.L., Luo, P., Choi, W.K., Tan, S.C.   +3 more
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A Si3N4 Tube Formed Using TMAH Etching

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In this paper, micro-tube fabricated from SiO2/Si3N4 strained composite structures using a self-scrolling procedure is presented. This fabrication is a self-organization process using stress of bifilm. This technique is based on self-rolling of a thin highly strained SiO2/ Si3N4 bifilm detached from the substrate by TMAH selective etching. The material
Huijun Chen, Dacheng Zhang
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Formation of pyramids at surface of TMAH etched silicon

Applied Surface Science, 1999
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Bai, Y., Tan, C.M., Chua, T.H.   +5 more
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An Experimental Study of TMAH Etching Silicon for MEMS

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper.
Feiyan Chen, Guoqing Hu, Baihai Wu
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Si and SiGe Alloys Wet Etching Using TMAH Chemistry

ECS Transactions, 2013
From MEMS to CMOS applications, silicon wet anisotropic etching is nowadays considered as an interesting alternative to face new and various technological challenges. This paper focuses on the TMAH chemistry and its use for Si and Si1-xGex alloys etching.
Virginie Loup, Laurence Gabette, Marie-Christine Roure, Riadh Kachtouli, Marine Jourdan, Pascal Besson, Sebastien Petitdidier   +6 more
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Encapsulation of naked dies for bulk silicon etching with TMAH

Microelectronics Reliability, 2002
Abstract Because of the increasing number of metal levels within a semiconductor device and the ongoing transition to new package types failure analysis from the back side of a die becomes necessary. A useful chemical for bulk silicon removal is tetra-methyl-ammonium-hydroxide (TMAH). Because of the aggressive etch conditions, the edges of naked dies
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On hillocks generated during anisotropic etching of Si in TMAH

Journal of Microelectromechanical Systems, 1996
Hillocks on etched Si{100} surfaces produced by anisotropic etching are a common irritant in the creation of micromachined devices. Close inspection of typical pyramidal hillock shapes reveals that they are usually bounded by convex -directed edges and {111} or near-{111} planes.
L.M. Landsberger, S. Naseh, M. Kahrizi, M. Paranjape   +3 more
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Mask-Under-Etch Experiments of Si{110} in TMAH

Engineering Solutions for the Next Millennium. 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99TH8411), 2003
This work investigates the etching of {110} silicon at 80°C in TMAH at 25wt% and 12wt%. A wagonwheel pattern having 1" spokes is used, and the under-etched surfaces and inclination angles are observed in detail. Under-etched surfaces are often complex, composed of 2 or 3 facets, some smooth and some rough.
A. Pandy, L.M. Landsberger, M. Kahrizi
openaire   +1 more source