Results 181 to 190 of about 3,921 (200)

Characterisation of pyramid formation arising from the TMAH etching of silicon

Sensors and Actuators A: Physical, 1998
An investigation on the influence of etchant concentration, ambient temperature and wafer thermal history on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Tan, C.M., Chua, T.H., Bai, Y.   +5 more
openaire   +1 more source

Optimization of (100)-Si TMAH etching for uncooled infrared detector

SPIE Proceedings, 2009
The influences of concentration of the Tetra-methyl ammonium hydroxide (TMAH) solution together with oxidizer additions were studied in order to optimize the anisotropic silicon etching in the development of a fabrication process for Ba 0.65 Sr 0.35 TiO 3 (BST) pyroelectric thin film infrared detectors.
Y. Shuai, C. G. Wu, W. L. Zhang, Y. R. Li, X. Z. Liu, J. Zhu   +5 more
openaire   +1 more source

Comparison of anisotropic etching properties between KOH and TMAH solutions

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
We compared the anisotropic etching properties of KOH and TMAH solutions. We used hemispherical specimens of single-crystal silicon on where surface whole crystallographic orientations appeared, in order to evaluate the etching properties as a function of the orientations. We carried out a series of the experiments using different concentrations of two
M. Shikida, K. Sato, K. Tokoro, D. Uchikawa   +3 more
openaire   +1 more source

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

Nanotechnology, 2010
Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold ...
Päivi, Sievilä, Nikolai, Chekurov, Ilkka, Tittonen   +2 more
openaire   +2 more sources

Study of Si(1 0 0) surfaces etched in TMAH solution

Sensors and Actuators A: Physical, 2001
Abstract Si(1 0 0) surfaces treated in a tetramethylammonium hydroxide (TMAH) solution at 70°C have been studied using spectroscopic ellipsometry (SE) and ex situ atomic force microscopy (AFM). The SE data indicate that surface native oxide is etched gradually and then lift-off in places with immersing in the solution. Since the solution attacks bulk
Kaoru Sakaino, Sadao Adachi
openaire   +1 more source

Roughness Characterization of Si(110) Etched in TMAH by Atomic Force Microscopy

MRS Proceedings, 1999
AbstractWe have investigated the roughness of a silicon (110)-oriented surface after being etched with 20% TMAH (Tetra-methyl Ammonium Hydroxide). We have used an Atomic Force Microscope to determine the roughness exponent α using three different methods: fractal, power spectrum density and scaling analysis.
Z. Moktadir, K. Sato, A. Matsumuro, K. Kayukawa, M. Shikida   +4 more
openaire   +1 more source

Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation

Sensors and Actuators A: Physical, 1999
Mitsuhiro Shikida
exaly  

Silicon anisotropic etching in TMAH solutions containing alcohol and surfactant additives

Sensors and Actuators A: Physical, 2012
Irena Zubel
exaly  

TMAH-Based Anisotropic Etching

2017
openaire   +1 more source

Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications

Microelectronic Engineering, 2005
Kalpathy B Sundaram
exaly