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Investigations on the morphology of silicon surfaces anisotropically etched with TMAH

Materials Science and Engineering: B, 2000
Abstract The formation and transformation of hillocks during the anisotropic etching of (100) silicon are investigated. Hillocks start as pyramids and grow in size as the surface etches down. The main pyramid edges become bevelled in the process, and when the bevelling planes meet, 〈101〉 ledges are formed which propagate and transform the {111} faces
Thong, J.T.L.   +3 more
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Anisotropic etching of surfactant-added TMAH solution

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999
The anisotropic silicon etching characteristics of surfactant-added tetramethyl ammonium hydroxide (TMAH) solution were investigated. It was found that the etch rate of the [110] crystal plane abruptly decreases by more than one order of magnitude and that the etch rate ratio of the etch rate of the [100] crystal plane to the etch rate of the [110 ...
openaire   +1 more source

Wet Etching Behavior of Poly-Si in TMAH Solution

Solid State Phenomena, 2012
Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order ...
Hiroaki Takahashi   +6 more
openaire   +1 more source

Anisotropic etching properties of silicon in KOH and TMAH solutions

MHA'98. Proceedings of the 1998 International Symposium on Micromechatronics and Human Science. - Creation of New Industry - (Cat. No.98TH8388), 2002
We investigated anisotropic etching properties of single-crystal silicon as a function of crystallographic orientations in order to fabricate a variety of 3D microstructures on silicon substrates. We measured etching rates for a number of crystallographic orientations using hemispherical specimens.
K. Tokoro   +3 more
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Silicon Field Emitters fabricated by Dicing-Saw and TMAH-Etch

2020 33rd International Vacuum Nanoelectronics Conference (IVNC), 2020
A novel silicon field emission source is presented, which is fabricated by saw dicing and TMAH-etching. Samples with different tip densities were investigated. Due to the fabrication process a higher tip density leads to a lower tip height. Very similar characteristics were observed for all different geometries. Emission currents of 10 $\mu\mathrm{A}$
Simon Edler   +8 more
openaire   +1 more source

Silicon Etching Characteristics in Modified TMAH Solution

2019
In the present work, we have studied the etching characteristics of Si{100} and Si{110} in modified low concentration TMAH solution by adding different concentrations of NH2OH. The etch rate of silicon and thermal oxide, and etched surface morphology, which are important parameters to be known in the fabrication of MEMS structures using silicon wet ...
Veerla Swarnalatha   +2 more
openaire   +1 more source

Electrochemical etch-stop in TMAH without externally applied bias

Sensors and Actuators A: Physical, 1996
Abstract This paper presents a method for electrochemical etch-stop without the use of an externally applied bias voltage. This greatly simplifies the etch process and enables batch fabrication to be achieved. The process is based on the formation of a wet battery when a gold-chrome/n-type silicon/TMAH construction is formed.
P.J. French, M. Nagao, M. Esashi
openaire   +1 more source

Surface roughness of single-crystal silicon etched by TMAH solution

Sensors and Actuators A: Physical, 2001
We investigated the surface roughness properties of single-crystal silicon etched by a TMAH water solution. We used a hemispherical specimen, in which all crystallographic orientation planes appeared on the surface, and made a map of the surface roughness distribution pattern.
Mitsuhiro Shikida   +3 more
openaire   +1 more source

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

International Symposium for Testing and Failure Analysis, 2000
Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in
Mark Morris   +3 more
openaire   +1 more source

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