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Si and SiGe Alloys Wet Etching Using TMAH Chemistry
ECS Transactions, 2013From MEMS to CMOS applications, silicon wet anisotropic etching is nowadays considered as an interesting alternative to face new and various technological challenges. This paper focuses on the TMAH chemistry and its use for Si and Si1-xGex alloys etching.
Virginie Loup +6 more
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High-performance PIN photodiodes on TMAH thinned silicon wafers
Microelectronics Journal, 2008The electro-optical characteristics of PIN photodiodes fabricated on high-resistivity silicon substrates locally thinned by bulk micromachining techniques are discussed. Experimental results and numerical simulations demonstrate that devices fabricated by the proposed approach have leakage current, quantum efficiency and speed performance comparable to
Gian-Franco Dalla Betta +3 more
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On hillocks generated during anisotropic etching of Si in TMAH
Journal of Microelectromechanical Systems, 1996Hillocks on etched Si{100} surfaces produced by anisotropic etching are a common irritant in the creation of micromachined devices. Close inspection of typical pyramidal hillock shapes reveals that they are usually bounded by convex -directed edges and {111} or near-{111} planes.
L.M. Landsberger +3 more
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Anisotropic etching of surfactant-added TMAH solution
Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291), 1999The anisotropic silicon etching characteristics of surfactant-added tetramethyl ammonium hydroxide (TMAH) solution were investigated. It was found that the etch rate of the [110] crystal plane abruptly decreases by more than one order of magnitude and that the etch rate ratio of the etch rate of the [100] crystal plane to the etch rate of the [110 ...
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Techniques for the analysis of Cl-ion in TMAH
SPIE Proceedings, 1998Fabricating integrated circuits with increasingly smaller elements mandates that the chlorine ion contents in 2.38% TMAH to be under the 50 ppb level. Previously, the interference from TMAH inhibited the analysis of chlorine ion in TMAH by ion chromatography.
Bang-Chein Ho +2 more
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Mask-Under-Etch Experiments of Si{110} in TMAH
Engineering Solutions for the Next Millennium. 1999 IEEE Canadian Conference on Electrical and Computer Engineering (Cat. No.99TH8411), 2003This work investigates the etching of {110} silicon at 80°C in TMAH at 25wt% and 12wt%. A wagonwheel pattern having 1" spokes is used, and the under-etched surfaces and inclination angles are observed in detail. Under-etched surfaces are often complex, composed of 2 or 3 facets, some smooth and some rough.
A. Pandy, L.M. Landsberger, M. Kahrizi
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Metal purifier for TMAH developer solution
Advances in Patterning Materials and Processes XL, 2023Jinhong Yu, Robb Fang, Yoshiaki Yamada
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Non standard behaviour of TMAH anisotropic wet etching
2022Trabajo presentado en Eurosensors XII: 12th European Conference on Solid-State Transducers and the 9th UK Conference on Sensors and Their Applications, celebrado en Southampton (Reino Unido), del 13 al 16 de septiembre de ...
Duch, M. +3 more
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