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Insight into the responses of the anammox granular sludge system to tetramethylammonium hydroxide (TMAH) during chip wastewater treatment.

Environmental Research
Tetramethylammonium hydroxide (TMAH), an extensively utilized photoresist developer, is frequently present in ammonium-rich wastewater from semiconductor manufacturing, and its substantial ecotoxicity should not be underestimated.
Andong Zhao   +9 more
semanticscholar   +1 more source

Silicon anisotropic etching of TMAH solution

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570), 2002
Detailed characteristics of tetramathyl ammonium hydroxide (TMAH, (CH/sub 3/)/sub 4/ NOH) as a silicon anisotropic etching solution with various concentrations from 5 to 40 wt% and temperatures between 60 to 90/spl deg/C have been studied. The etching of (100) crystal decreases with increasing concentration and decreasing temperature.
W. Sonphao, S. Chaisirikul
openaire   +1 more source

Anisotropy and selectivity control of TMAH

Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176), 2002
A new approach to control the characteristics of TMAH silicon anisotropic etchant is proposed. The effects of potassium ions on TMAH etching characteristics at a concentration of 20 wt.% and temperature of 80/spl deg/C were investigated. A K/sub 2/CO/sub 3/ additive to the TMAH was used as a potassium ion source.
openaire   +1 more source

Treatment of TMAH solutions from the microelectronics industry: A combined process scheme

Journal of Water Process Engineering, 2019
The microelectronics industry produces significant amounts of wastewaters containing inorganic substances such as fluorides, phosphates, and organic pollutants such as acetic acid (CH3COOH), and tetramethylammonium hydroxide (C4H13NO, TMAH).
V. Innocenzi   +6 more
semanticscholar   +1 more source

Silicon etching characteristics for the TMAH based solution with additives

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C.
Ki-Wha Jun, Jung-Sik Kim
openaire   +1 more source

Evolution of hillocks during silicon etching in TMAH

Journal of Micromechanics and Microengineering, 2000
The evolution of hillocks on (100)-silicon etched in 4 wt% tetramethyl ammonium hydroxide is studied through a detailed examination of hillock size distribution and individual hillock features using low-voltage scanning electron microscopy. Silicon samples etched for periods of 1.5, 3 and 5 min show that the population of hillocks initially comprises ...
Thong, J.T.L.   +3 more
openaire   +1 more source

A Si3N4 Tube Formed Using TMAH Etching

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In this paper, micro-tube fabricated from SiO2/Si3N4 strained composite structures using a self-scrolling procedure is presented. This fabrication is a self-organization process using stress of bifilm. This technique is based on self-rolling of a thin highly strained SiO2/ Si3N4 bifilm detached from the substrate by TMAH selective etching. The material
Huijun Chen, Dacheng Zhang
openaire   +1 more source

The Study of TMAH Permeation Through Protective Rubber

Polymer-Plastics Technology and Engineering, 2013
This study aimed to discuss the permeability resistance of protective materials against Tetra methyl Ammonium Hydroxide (TMAH) to help the operators to select suitable gloves to eliminate the hazard of health. The results indicated that, the protective performances of protective gloves are better against 2.38% TMAH than against 25% TMAH. As the ambient
Ching-Iuan Su   +4 more
openaire   +1 more source

Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

IEEE Electron Device Letters, 2018
This letter reports on the dynamic $R_{\text{ON}}$ performance of large-area GaN vertical trench MOSFETs (OG-FETs) fabricated on bulk GaN substrates. OG-FETs demonstrated excellent DC performance with a breakdown voltage of 900 V and a $R_{\text{ON}}$
D. Ji   +12 more
semanticscholar   +1 more source

TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi   +8 more
openaire   +1 more source

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