Results 1 to 10 of about 25,830 (234)
A model of partially-depleted SOI MOSFETs in the subthreshold range
Journal of Telecommunications and Information Technology, 2001 A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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Microscopic Theory of Transconductivity [PDF]
VLSI Design, 1998 Measurements of momentum transfer between two closely spaced mesoscopic electronic systems, which couple via Coulomb interaction but where tunneling is inhibited, have proven to be a fruitful method of extracting information about interactions in mesoscopic systems.
A. P. Jauho +4 more
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Systematic Comparison of HF CMOS Transconductors [PDF]
, 2003 Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties.
Klumperink, Eric A.M., Nauta, Bram
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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]
E3S Web of ConferencesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae +2 more
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Micromachines, 2023 In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang +10 more
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Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]
, 2007 The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Abrokwah, J. +11 more
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New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
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A 0.18μm CMOS 9mW current-mode FLF linear phase filter with gain boost [PDF]
, 2007 “This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders.
Moritz, J., Sun, Y., Zhu, X.
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Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis
IEEE Journal of the Electron Devices Society, 2019 This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the ...
Mandar S. Bhoir +6 more
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Transconductance of a double quantum dot system in the Kondo regime [PDF]
, 2007 We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an anti-ferromagnetic exchange interaction. Each of the two dots is contacted by two leads.
A. A. Abrikosov +3 more
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