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Evaluation of a Silicon Carbide Static Induction Transistor for High Frequency/High Temperature Sensor Interface Circuits: Measurements and Modeling [PDF]
SensorsIn this paper, we report on the characterization of a silicon carbide static induction transistor (SiC SIT) for potential use in sensor interface circuits that operate at frequencies up to 100 MHz and temperatures up to 400 °C.
Jonathon R. Grgat +2 more
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Sensors, 2023 In this work, a new versatile voltage- and transconductance-mode analog filter is proposed. The filter, without requiring resistors, employs three differential-difference transconductance amplifiers (DDTAs) and two grounded capacitors, which is suitable ...
Tomasz Kulej +3 more
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Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors [PDF]
GelsGel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems.
Mancheng Li +3 more
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Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein [PDF]
Scientific ReportsThis work presents a comprehensive investigation of symmetric (HJ-DD-UTFET) and asymmetric Source Drain Heterojunction Dual Dielectric Uniform Tunnel Field-Effect Transistors (A-SD-HJ-DD-UTFET) to achieve enhanced analog/RF, and linearity performance ...
Ranjith Kumar T, Lakshmi Priya G
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Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]
Journal of Intelligent Procedures in Electrical Technology, 2012 The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi +2 more
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OTA Based Mem-capacitor Validation and Implementation Using Commercially Available IC [PDF]
International Journal of Electronics and Telecommunications, 2023 This paper discusses a mem-capacitor circuit which is based on two MO-OTA along with a multiplier and 4 passive elements. This circuit is a charge-controlled memcapacitor emulator which is independent of any memristor also it consists the feature of ...
Chandra Shankar +3 more
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Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor [PDF]
مجله مدل سازی در مهندسی, 2023 In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor.
reyhaneh ejlali +3 more
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Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
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Nanomaterials, 2022 Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors.
Songyou Zhang +4 more
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Nanomaterials, 2023 2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties.
Kamoladdin Saidov +6 more
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