Results 101 to 110 of about 28,299 (286)

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

, 2011
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG, Georgiou, P, Liu, Y, Prodromakis, T, Toumazou, C   +4 more
core   +1 more source

A Design of Wide-Range and Low Phase Noise Linear Transconductance VCO with 193.76 dBc/Hz FoMT for mm-Wave 5G Transceivers [PDF]

, 2020
Arash Hejazi, YoungGun Pu, Kang‐Yoon Lee   +2 more
openalex   +1 more source

Al Nanoparticle‐Decorated Metal Oxide Synaptic Transistors for Ultralow‐Energy Neuromorphic Computing with Wide Dynamic Range

Advanced Science, EarlyView.
A nanoparticle‐engineered electrolyte‐gated memtransistor is introduced as a materials‐level strategy to overcome the intrinsic trade‐off between energy consumption and synaptic precision. By embedding aluminum nanoparticles at the oxide–electrolyte interface to modulate ion trapping dynamics, the device achieves stable multistate plasticity under ...
Jun‐Gyu Choi, Yoonseok Song, Seokhyeon Baek, Jingon Jang, Sungjun Park   +4 more
wiley   +1 more source

Digitally Programmable Integrator and Differentiator

Active and Passive Electronic Components, 1995
Digitally programmable integrator and differentiator circuits are presented. Each circuit uses at most one operational amplifier, two operational transconductance amplifiers, and one capacitor.
Abdulrahman Khalaf Al-Ali, Muhammad Taher Abuelma'atti, Syed Yunus   +2 more
doaj   +1 more source

A High Slew-Rate Enhancement Class-AB Operational Transconductance Amplifier (OTA) for Switched-Capacitor (SC) Applications [PDF]

, 2020
Jaedo Kim, Seokjae Song, Jeongjin Roh
openalex   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

Advanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren, Qi Huang, Dingwei Li, Saisai Wang, Yitong Chen, Huihui Ren, Yan Wang, Yingjie Tang, Bowen Zhu   +8 more
wiley   +1 more source

An Ultra-Low-Voltage Transconductance Stable and Enhanced OTA for ECG Signal Processing

Micromachines
In this paper, a rail-to-rail transconductance stable and enhanced ultra-low-voltage operational transconductance amplifier (OTA) is proposed for electrocardiogram (ECG) signal processing. The variation regularity of the bulk transconductance of pMOS and
Yue Yin, Xinbing Zhang, Ziting Feng, Haobo Qi, Haodong Lu, Jiayu He, Chaoqi Jin, Yihao Luo   +7 more
doaj   +1 more source

A Tunable Quadrature Oscillator with Only Transconductance Elements and Grounded Capacitors

Active and Passive Electronic Components, 2002
A novel quadrature oscillator is realised with only transconductance elements (TEs) and grounded capacitors. The realised quadrature oscillator uses only two inverting and two non-inverting transconductance elements, along with two grounded capacitors ...
Iqbal A. Khan, Muslim T. Ahmed, Nigar Minhaj   +2 more
doaj   +1 more source

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

Advanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan, Wenyu Zhang, Tao Luo, XiaoLu Xia, Qianxi Yang, Ying Yan, Shengmei Gao, Xitian Yin, Yixiao Niu, Zhiyu Zhao, Jianbing Zhang, Haobin He, Jiang Tang, Ying Wang, Zhiyong Zhang   +14 more
wiley   +1 more source

Theoretical Model of I-V Characteristics of pH-Sensitive Organic Electrochemical Transistors Based on Sigmoid Function

Taiyuan Ligong Daxue xuebao
[Purposes] Previously, pH sensors have been fabricated based on pH-sensitive poly (3,4-ethylenedioxythiophene)/bromothymol blue film and the semiconducting layer of poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate and a theoretical model has been ...
WANG Zhenxing, ZHANG Fan, JI Chao, WANG Bin, CHAI Xiaojie, JI Jianlong, ZHANG Wendong, SANG Shengbo   +7 more
doaj   +1 more source