Results 241 to 250 of about 28,299 (286)

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

Stretchable all-gel organic electrochemical transistors. [PDF]

Nat Commun
Lu L, Liu X, Gu P, Hu Z, Liang X, Deng Z, Sun Z, Zhang X, Yang X, Yang J, Zu G, Huang J.   +11 more
europepmc   +1 more source

The Planar Core-Shell Junctionless MOSFET. [PDF]

Micromachines (Basel)
Dou C, Song W, Yan Y, Zhang X, Tang Z, Zhao X, Liu F, Xue S, Sun H, Wan J, Li B, Wang Y, Ye T, Xu Y, Cristoloveanu S.   +14 more
europepmc   +1 more source

An Active, Multimodal Neural Interface for Real-Time Monitoring of Cortical Electrical, Thermal, and Optical Dynamics. [PDF]

Adv Sci (Weinh)
Li J, Lu Y, Li Z, Jin L, Zhou L, Ding K, Liu J, Hu B, Liu P, An D, Liang F, Hu Y, Shao Y, Ding Y, Ma L, Li R, Mei Y, Zhang R, Song E.   +18 more
europepmc   +1 more source

Advancing 2D CMOS electronics with high-performance p-type transistors. [PDF]

Nat Commun
Jiang J, Zheng X, Liu Y, Li LJ, Xu L, Kong J, Peng LM.   +6 more
europepmc   +1 more source

Theoretical analysis of MWCNT and MXene/High-k pH BioFET sensors for biomedical applications. [PDF]

Sci Rep
Dhiman G, Routray A.
europepmc   +1 more source

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]

Micromachines (Basel)
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc   +1 more source

Balanced Ambipolar OECTs through Tunability of Blend Microstructure. [PDF]

ACS Appl Mater Interfaces
Moscovich N, Simotko S, Reyn E, Zerachia I, Hadar A, Frey GL.   +5 more
europepmc   +1 more source

A Subsampling Phase-Locked Loop with a Dual Charge Pump Based on Capacitor Multipliers for CMOS Image Sensor. [PDF]

Micromachines (Basel)
Lin Y, Wang B, Jin L, Tang Z, Ye F, Xie R, Wu L, Shi G, Liu H.   +8 more
europepmc   +1 more source

<i>Ab initio</i> quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics. [PDF]

RSC Adv
Ghafoor M, Khan R, Din SU, Safeen A, Li Q, Yang X, Yang Z, Lu J.   +7 more
europepmc   +1 more source