Results 21 to 30 of about 28,299 (286)

Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier

U.Porto Journal of Engineering, 2021
In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input.
Rajesh Durgam, S. Tamil, Nikhil Raj
doaj   +1 more source

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Abrokwah, J., Droopad, R., Hill, R.J.W., Li, X., McIntyre, D., Moran, D.A.J., Passlack, M., Rajagopalan, K., Thayne, I.G., Thoms, S., Zhou, H., Zurcher, P.   +11 more
core   +1 more source

Analog Integrated Current Drivers for Bioimpedance Applications: A Review

Sensors, 2019
An important component in bioimpedance measurements is the current driver, which can operate over a wide range of impedance and frequency. This paper provides a review of integrated circuit analog current drivers which have been developed in the last 10 ...
Nazanin Neshatvar, Peter Langlois, Richard Bayford, Andreas Demosthenous   +3 more
doaj   +1 more source

Biquadratic transconductance switched-capacitor filters [PDF]

IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1993
The author presents a new type of sampled data filters consisting of transconductance, switches, and capacitors, called transconductor switched capacitor (TSC) filters. The implementation of this type of filter is particularly suitable for the CMOS integrated circuit technologies.
openaire   +4 more sources

A model of partially-depleted SOI MOSFETs in the subthreshold range

Journal of Telecommunications and Information Technology, 2001
A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
doaj   +1 more source

Microscopic Theory of Transconductivity [PDF]

VLSI Design, 1998
Measurements of momentum transfer between two closely spaced mesoscopic electronic systems, which couple via Coulomb interaction but where tunneling is inhibited, have proven to be a fruitful method of extracting information about interactions in mesoscopic systems.
A. P. Jauho, M. B. Bønsager, K. Flensberg, B. Y.-K. Hu, J. Kinaret   +4 more
openaire   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Micromachines, 2023
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +1 more source

A systematic approach to circuit design and analysis: classification of Two-VCCS Circuits [PDF]

, 1999
This paper discusses a systematic approach to the design and analysis of circuits, using a transconductor or voltage controlled current source (VCCS) as a building block.
Klumperink, Eric A.M.
core   +2 more sources

New ELIN Systems Using CMOS Transistors in Weak Inversion Operation

Advances in Electrical and Computer Engineering, 2013
In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
doaj   +1 more source