Results 41 to 50 of about 28,299 (286)

Bias and temperature dependence of the 0.7 conductance anomaly in Quantum Point Contacts

, 2000
The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in
A. E. Hansen, A. Forchel, A. Kristensen, A. Kristensen, A. Kristensen, A. Yacobi, B. Spivak, B.E. Kane, B.J. van Wees, C. B. Sørensen, C. J. Marckmann, C.-K. Wang, C.-T. Liang, D.A. Wharam, F. Beuscher, H. Bruus, J. B. Jensen, J. Nygård, K.J. Thomas, K.J. Thomas, K.J. Thomas, L. Martin-Moreno, L.I. Glazman, L.P. Kouwenhoven, M. Michel, N.K. Patel, N.K. Patel, P. E. Lindelof, R.D. Tscheuschner, S. Tarucha   +29 more
core   +1 more source

Finding all elementary circuits exploiting transconductance

ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2001
Summary: Commonly used elementary circuits like single-transistor amplifier stages, the differential pair, and current mirrors basically exploit the transconductance property of transistors. This paper aims at finding all elementary transconductance-based circuits.
Klumperink, Eric A.M., Bruccoleri, F., Nauta, Bram   +2 more
openaire   +4 more sources

Channel length effects on the performance of vOECTs

Materials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen, Baining Tao, Dan Zhao, Yixin Zhou, Yueheng Zhong, Sihui Hou, Liang-Wen Feng, Jianhua Chen, Gang Wang, Wei Huang   +9 more
doaj   +1 more source

Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]

, 2011
We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D., Coutu, Ronald A., Jr., Heller, Eric R., Poling, Brian S., Shealy, Jeffrey B., Vetury, Ramakrishna, Via, Glen D.   +6 more
core   +2 more sources

Ferrocene Derivatives Enable Ultrasensitive Perovskite Photodetectors with Enhanced Reverse Bias Stability

Advanced Functional Materials, EarlyView.
Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong, William D. J. Tremlett, Lucy Hart, Beier Hu, Zhuoran Qiao, Patipan Sukpoonprom, Sarah Fearn, Edoardo Angela, Matilde Brunetta, Demosthenes C. Koutsogeorgis, Nikolaos Kalfagiannis, Davide Nodari, Martyn A. McLachlan, Piers R. F. Barnes, Artem A. Bakulin, Nicholas J. Long, Nicola Gasparini   +16 more
wiley   +1 more source

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

IEEE Access, 2019
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi, Chitrakant Sahu, Jawar Singh   +2 more
doaj   +1 more source

A Complementary Recycling Operational Transconductance Amplifier with Data-Driven Enhancement of Transconductance [PDF]

Electronics, 2019
An improved operational transconductance amplifier (OTA) is presented in this work. The fully differential OTA adopts the current recycling technique and complementary NMOS and PMOS input branches to enhance the total transconductance. Moreover, in order to achieve higher current efficiency, a data-driven biasing circuit was developed to dynamically ...
Xiang Li, Bo Hou, Chunge Ju, Qi Wei, Bin Zhou, Rong Zhang   +5 more
openaire   +1 more source

Multicolor Optoelectronic Synapse Enabled by Photon‐Modulated Remote Doping in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Multicolor optoelectronic synapses are realized by vertically integrating solution‐processed MoS2 thin‐film and SWCNT. The electronically disconnected but interactive MoS2 enables photon‐modulated remote doping, producing a bi‐directional photoresponse.
Jihyun Kim, Hyunbin Kim, Gang Jin Cheon, Dohyun Lee, In Soo Kim, Uiyeon Won, Jongseok Lee, Sang Min Won, Joohoon Kang   +8 more
wiley   +1 more source

An electrostatically defined serial triple quantum dot charged with few electrons [PDF]

, 2007
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector.
A. D. Greentree, D. Schröer, J. P. Kotthaus, K. Eberl, L. C. L. Hollenberg, L. Gaudreau, L. P. Kouwenhoven, S. Ludwig, W. G. van der Wiel   +8 more
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source