Results 71 to 80 of about 25,830 (234)
gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs
Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 ...
Gautham Rangasamy +3 more
doaj +1 more source
Photo‐Patternable PEDOT:PSS for High Performance Organic Electrochemical Transistors
Organic mixed ionic‐electronic conductors, such as PEDOT:PSS, are a special class of material capable of dual conductivity, making them a perfect choice to bridge biology and man‐made technology. PEDOT:PSS can be photo‐patterned by blending it with a photo‐sensitive interpenetrating network.
Charles‐Théophile Coen +4 more
wiley +1 more source
An electrostatically defined serial triple quantum dot charged with few electrons [PDF]
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector.
A. D. Greentree +8 more
core +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon ...
Guiru Gu +15 more
doaj +1 more source
Self-selective ferroelectric memory realized with semimetalic graphene channel
A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally.
Sungchul Jung +11 more
doaj +1 more source
Transport and Coulomb drag for two interacting carbon nanotubes
We study nonlinear transport for two coupled one-dimensional quantum wires or carbon nanotubes described by Luttinger liquid theory. Transport properties are shown to crucially depend on the contact length $L_c$.
Egger, R., Komnik, A.
core +1 more source
On the development of a MODEM for data transmission and control of electrical household appliances using the low-voltage power-line [PDF]
This paper presents a CMOS 0,6μm mixed-signal MODEM ASIC for data transmission on the low-voltage power line. The circuit includes all the analog circuitry needed for input interfacing and modulation/demodulation (PLL-based frequency synthesis, slave ...
Domínguez Matas, Carlos +4 more
core +1 more source
Conductive Hydrogels for Exogenous Sensing and Cell Fate Control
We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar +15 more
wiley +1 more source
A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces
The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces.
Jacek Jakusz +4 more
doaj +1 more source

