Results 71 to 80 of about 28,299 (286)

Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs [PDF]

, 2013
Current-mode (CM) and voltage-mode (VM) multiphase sinusoidal oscillator (MSO) structures using current backward transconductance amplifier (CBTA) are proposed.
Ayten, U. E., Herencsar, N., Minaei, S., Sagbas, M.   +3 more
core   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

Journal of Nanotechnology, 2011
We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon ...
Guiru Gu, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, Vijaya Kayastha, Nick L. Downing, Xuliang Han, Harish Subbaraman, Dan Pham, Ray T. Chen, Maggie Yihong Chen, Urs Berger, Mike Renn   +15 more
doaj   +1 more source

Electronically Tunable Resistorless Mixed Mode Biquad Filters [PDF]

, 2013
This paper presents a new realization of elec¬tronically tunable mixed mode (including transadmittance- and voltage-modes) biquad filter with single input, three outputs or three inputs, single output using voltage differ-encing transconductance ...
Kacar, F., Yesil, A.
core   +1 more source

Noise in a Quantum Point Contact due to a Fluctuating Impurity Configuration

, 1994
We propose a theoretical model for the low-frequency noise observed in a quantum point contact (QPC) electrostatically defined in the 2D electron gas at a GaAs-AlGaAs interface.
, , A M Zagoskin, Anderson P W, Beenakker C W J, Brataas A, Galperin Yu M, Gardiner C W, Glazman L I, Glazman L I, J P Hessling, Karpov V G, Khlus V A, Lesovik G B, Lindeløf P E, M Jonson, Phillips W A, R I Shekhter, Taboryski R, Yu Galperin, Zagoskin A M, Zagoskin A M   +21 more
core   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces

Sensors, 2020
The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces.
Jacek Jakusz, Waldemar Jendernalik, Grzegorz Blakiewicz, Miron Kłosowski, Stanisław Szczepański   +4 more
doaj   +1 more source

Self-selective ferroelectric memory realized with semimetalic graphene channel

npj 2D Materials and Applications, 2021
A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally.
Sungchul Jung, Jinyoung Park, Junhyung Kim, Wonho Song, Jaehyeong Jo, Hyunjae Park, Myong Kong, Seokhyeong Kang, Muhammad Sheeraz, Ill Won Kim, Tae Heon Kim, Kibog Park   +11 more
doaj   +1 more source

A modular T-mode design approach for analog neural network hardware implementations [PDF]

, 1992
A modular transconductance-mode (T-mode) design approach is presented for analog hardware implementations of neural networks. This design approach is used to build a modular bidirectional associative memory network.
Huertas Díaz, José Luis, Linares Barranco, Bernabé, Rodríguez Vázquez, Ángel Benito, Sánchez Sinencio, Edgar   +3 more
core   +1 more source

Fully Printed Organic Electrochemical Transistors With Low‐Resistance Electrodes on Planarized 3D‐Printed Substrates

Advanced Materials Technologies, EarlyView.
This paper explores integrating organic electrochemical transistors (OECTs) with planarized 3D‐printed substrates, utilizing ironing to enhance surface suitability for printing, dispense printing for thick, low‐resistance silver electrodes, and inkjet printing for semiconductor deposition.
Mohamad Kannan Idris, Ali Eskandari, Saumik Dey Shovan, Gerd Grau   +3 more
wiley   +1 more source