Results 171 to 180 of about 679,929 (398)
Two-stage emitter follower is temperature stabilized [PDF]
, 1964 Two-stage temperature stabilized circuit using two transistors is described. Increase in temperature causes the base-to-emitter voltage of n-p-n transistor to become less positive whereas the base-to-emitter voltage of p-n-p transistor becomes less ...
Schmidt, M. H.
core +1 more source
Advanced Functional Materials, EarlyView.Janus (MoS2) transistors functionalized with sodium alginate (SA) and poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] exhibit persistent photo‐induced ionic gating, driven by dynamic cation migration at the hybrid interface. This ionic mechanism enables finely tunable photoconductivity and emulates key synaptic plasticity behaviors ...
Yeonsu Jeong +5 more
wiley +1 more source
Detection of IgG Antibodies Against COVID-19 N-Protein by Hybrid Graphene–Nanorod Sensor
BiosensorsThe COVID-19 pandemic highlighted the global necessity to develop fast, affordable, and user-friendly diagnostic alternatives. Alongside recognized tests such as ELISA, nanotechnologies have since been explored for direct and indirect diagnosis of SARS ...
R. V. A. Boaventura +12 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes +3 more
wiley +1 more source
JFET reflection oscillator [PDF]
, 1985 A high frequency oscillator circuit is provided using a low cost junction type field effect transistor (T sub 1) with a tuned circuit connected to its gate.
Kleinberg, L. L.
core +1 more source
Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection
Advanced Functional Materials, EarlyView.A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang +12 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee +5 more
wiley +1 more source