Results 171 to 180 of about 336,103 (238)

Can the Timing of the Origin of Life Be Inferred from Trends in the Growth of Organismal Complexity? [PDF]

Life (Basel)
Juckett DA.
europepmc   +1 more source

Soft-Error-Resilient Static Random Access Memory with Enhanced Write Ability for Radiation Environments. [PDF]

Micromachines (Basel)
Park SY, Jeong EG, Jo SH.
europepmc   +1 more source

A one-transistor organic electrochemical self-sustained oscillator model for neuromorphic networks.

Newton
Bisquert J, Tessler N.
europepmc   +1 more source

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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.

Nature Nanotechnology, 2007
The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating.
A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. Saha, U. Waghmare, K. Novoselov, H. R. Krishnamurthy, A.K. Geim, A. Ferrari, A. Sood   +10 more
semanticscholar   +1 more source

Recent Advances in Transistor‐Based Artificial Synapses

Advanced Functional Materials, 2019
Simulating biological synapses with electronic devices is a re‐emerging field of research. It is widely recognized as the first step in hardware building brain‐like computers and artificial intelligent systems.
Shilei Dai, Yiwei Zhao, Yan Wang, Junyao Zhang, Lu Fang, Shu Jin, Yinlin Shao, Jia Huang   +7 more
semanticscholar   +1 more source

Field-effect transistor versus analog transistor (static induction transistor)

IEEE Transactions on Electron Devices, 1975
The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of the negative feedback action, increases through a marked increase of the Series channel resistance in the neighborhood of the pinch-off voltage, under which condition the apparent transfercon-ductance G_{m'}= G_{m}/(1 + r_{s}
J. Nishizawa, T. Terasaki, J. Shibata
openaire   +1 more source

A ferroelectric semiconductor field-effect transistor

Nature Electronics, 2018
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device.
M. Si, A. Saha, Shengjie Gao, G. Qiu, J. Qin, Yuqin Duan, J. Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, S. Gupta, P. Ye   +11 more
semanticscholar   +1 more source

Current transistor-transistor-inductor oscillator

IEE Proceedings - Circuits, Devices and Systems, 1994
An original and very simple design of an oscillator is presented. It used only three components: two transistors and one earthed inductor. The circuit gives a constant quasi-square output with a periodic time proportional to its input current. The oscillation modes, the oscillation conditions and the effects of nonideal devices are discussed, and some ...
J.C. Commercon, M. Guivarch
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Recent Process of Flexible Transistor-Structured Memory.

Small, 2020
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed.
Yao Ni, Yongfei Wang, Wentao Xu
semanticscholar   +1 more source