Results 221 to 230 of about 19,112 (260)
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1993
Hot electrons and holes in semiconductors are those having higher kinetic energy than some equilibrium value $$ E_0 \, \approx \,3/2 $$ kT. For the sake of brevity we will confine our examination to the case of hot electrons, although the same phenomena occur in the hole gas in semiconductors.
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Hot electrons and holes in semiconductors are those having higher kinetic energy than some equilibrium value $$ E_0 \, \approx \,3/2 $$ kT. For the sake of brevity we will confine our examination to the case of hot electrons, although the same phenomena occur in the hole gas in semiconductors.
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The single-electron transistor
Reviews of Modern Physics, 1992The discovery of periodic conductance oscillations as a function of charge density in very small transistors has led to a new understanding of the behavior of electrons in such small structures. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicronsize transistors, isolated from ...
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2015
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
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The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
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An overview of real‐world data sources for oncology and considerations for research
Ca-A Cancer Journal for Clinicians, 2022Lynne Penberthy +2 more
exaly
2015
In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
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In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
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Electron Spins in Single Electron Transistors
2009Abstract : Measurements of a single electron spin showed that the excited spin state in a GaAs single electron transistor can live for as long as 1s. However, the decoherence time in the excited state is known to be short, because of the coupling to nuclear spins.
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Developments in Transistor Electronics†
Journal of Electronics and Control, 1958ABSTRACT The design theory of point-contact and junction transistors is reviewed in this paper. Selected examples illustrate the small-signal and large-signal properties of junction transistors. These phenomena are related to the theory of p— n junctions. Also, it is indicated how circuit engineers benefit from a certain know-ledge of transistor theory.
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Electronic defects in metal oxide photocatalysts
Nature Reviews Materials, 2022Ernest Pastor +2 more
exaly
Design, fabrication and assembly considerations for electronic systems made of fibre devices
Nature Reviews Materials, 2023Huisheng Peng
exaly