Results 51 to 60 of about 19,112 (260)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Functionalized MXene ink enables environmentally stable printed electronics

Nature Communications
Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two ...
Tae Yun Ko, Heqing Ye, G. Murali, Seul-Yi Lee, Young Ho Park, Jihoon Lee, Juyun Lee, Dong-Jin Yun, Yury Gogotsi, Seon Joon Kim, Se Hyun Kim, Yong Jin Jeong, Soo-Jin Park, Insik In   +13 more
doaj   +1 more source

Cold electron Josephson transistor [PDF]

Applied Physics Letters, 2004
A superconductor-normal metal-superconductor mesoscopic Josephson junction has been realized in which the critical current is tuned through normal current injection using a symmetric electron cooler directly connected to the weak link. Both enhancement of the critical current by more than a factor of two, and supercurrent suppression have been achieved
Savin, AM, Pekola, JP, Flyktman, JT, Anthore, A, Giazotto, F   +9 more
openaire   +5 more sources

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Nanoporous Layer Integration for the Fabrication of ISFET and Related Transistor-Based Biosensors

Chemosensors
More and more chemosensors and biosensors are turning to electronic transistors, as they are ideal transducers, precise in current response, miniaturized in size and capable of providing sub-picomolar detection limits.
Cristian Ravariu, Elena Manea, Cătălin Pârvulescu, Gabriel Dima   +3 more
doaj   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Junction Transistor Electronics

Physics Bulletin, 1959
By Richard B. Hurley London : Chapman and Hall Ltd. Pp. xvii + 473. Price 100s. The first chapter is aptly entitled " Low Level Semiconductor Physics" and again one is struck by the disparity between the wealth of excellent books on transistor circuit applications and the paucity of comprehensive works dealing with solid state theory from an elementary
openaire   +3 more sources

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping [PDF]

APL Electronic Devices
A persistent challenge in transition metal dichalcogenide (TMD)-based transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface which introduces substantial contact resistance and degrades device performance.
Somaditya Santra, Sankalp Samdariya, Shaili Sett, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh   +5 more
doaj   +1 more source