Results 151 to 160 of about 11,441 (198)
Some of the next articles are maybe not open access.
Physical Model for ESD Human Body Model to Transmission Line Pulse
IEEE International Reliability Physics Symposium, 2019A rigorous electrothermal model that describes and correlate the behavior of the ESD devices during TLP and HBM stress conditions for various device types is developed, nearly five decades after well-known Wunsch-Bell and Tasca models.
Jian-Hsing Lee, N. M. Iyer, T. Maloney
semanticscholar +1 more source
IEEE transactions on device and materials reliability
With the wide applications of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) transistors in power conversion systems, their reliability has become a growing concern.
Dongyan Zhao +8 more
semanticscholar +1 more source
With the wide applications of Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) transistors in power conversion systems, their reliability has become a growing concern.
Dongyan Zhao +8 more
semanticscholar +1 more source
Transient Response of Very Fast Transmission Line Pulse: Procedures for Measurement Verification
Electrical Overstress/Electrostatic Discharge SymposiumAn important cause of inaccuracies in time dependent VF-TLP measurements of transient events are parasitic inductances/capacitances built into the test setup itself. In this paper it is discussed how to provide confidence of an accurate representation of
Leonardo Di Biccari +8 more
semanticscholar +1 more source
Evolution of Point Defects in Chip-Level Silicon-Based MOSFET Under Transmission Line Pulse Stress
IEEE Transactions on Electron DevicesIn this study, the electrical performance and evolution of point defects in chip-level Silicon-based MOSFET under transmission line pulse (TLP) stress were investigated.
Xinyuan Zheng +5 more
semanticscholar +1 more source
IEEE Biennial Congress of Argentina
A non-destructive testing method is described to evaluate in a single measurement process two parameters of protection devices against surge transient (SPD): the parasitic capacitance and the protection voltage.
J. G. Zola, Juan Miguel Kelly
semanticscholar +1 more source
A non-destructive testing method is described to evaluate in a single measurement process two parameters of protection devices against surge transient (SPD): the parasitic capacitance and the protection voltage.
J. G. Zola, Juan Miguel Kelly
semanticscholar +1 more source
2006
Radio frequency micro-electromechanical (RF-MEM) switches, both ohmic and capacitive, are important for future RF wired and wireless communication systems. In this paper, transmission line pulse testing and ESD characterization is shown for the first time.
TAZZOLI, AUGUSTO +3 more
openaire +1 more source
Radio frequency micro-electromechanical (RF-MEM) switches, both ohmic and capacitive, are important for future RF wired and wireless communication systems. In this paper, transmission line pulse testing and ESD characterization is shown for the first time.
TAZZOLI, AUGUSTO +3 more
openaire +1 more source
Immunotherapies for hepatocellular carcinoma
Nature Reviews Clinical Oncology, 2021, Florian Castet, Mala K Maini
exaly
International Conference on Microelectronic Test Structures, 2018
R. Ashton +3 more
semanticscholar +1 more source
R. Ashton +3 more
semanticscholar +1 more source

