Results 131 to 140 of about 322 (148)
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ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153), 2002
Transmission line pulsing (TLP) is a useful technique to characterize electrostatic discharge (ESD) events in semiconductor devices. The pulse waveforms generated by a typical TLP set-up, however, are often distorted and oscillatory. In this paper, a new and simple experimental set-up is developed to improve the shape of the TLP waveforms and thus to ...
J.C. Lee +4 more
openaire +1 more source
Transmission line pulsing (TLP) is a useful technique to characterize electrostatic discharge (ESD) events in semiconductor devices. The pulse waveforms generated by a typical TLP set-up, however, are often distorted and oscillatory. In this paper, a new and simple experimental set-up is developed to improve the shape of the TLP waveforms and thus to ...
J.C. Lee +4 more
openaire +1 more source
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017
For the first time this correlation study compares air discharge CDM and contact-mode Capacitively Coupled Transmission Line Pulsing (CC-TLP) for a large chip-on-flex assembly e.g. for the Internet of Things (IOT) applications. Both ground planes overlap only part of the flexible substrate with long traces.
Johannes Weber +4 more
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For the first time this correlation study compares air discharge CDM and contact-mode Capacitively Coupled Transmission Line Pulsing (CC-TLP) for a large chip-on-flex assembly e.g. for the Internet of Things (IOT) applications. Both ground planes overlap only part of the flexible substrate with long traces.
Johannes Weber +4 more
openaire +1 more source
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2003
Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width ...
B. Ronan +5 more
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Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width ...
B. Ronan +5 more
openaire +1 more source
, 2016 Electrostatic discharge sensitivity testing. Transmission line pulse (TLP). Component level
2015openaire +1 more source
Electrostatic discharge sensitivity testing. Transmission line pulse (TLP). Component level
2013openaire +1 more source
Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization
IEEE Transactions on Device and Materials Reliability, 2014J Liou
exaly
ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?
IEEE Transactions on Instrumentation and Measurement, 2009Mirko Scholz, Dimitri Linten, S Thijs
exaly