Results 11 to 20 of about 11,441 (198)

Transmission line pulse (TLP) as integrative method for the investigation of ultra-fast trapping mechanisms on high-k MIM [PDF]

Microelectronics Reliability, 2019
This paper discusses the transmission line pulse (TLP) analysis, generally used for electrostatic discharge (ESD) device characterization, as high potential usable tool also for non-ESD structures. TLP technique, combined with DC and pulsed I-V characterization, is performed to study the contribution of trap states on current conduction in metal ...
Merlo, Luca, Rossetto, Isabella, Cerati, Lorenzo, Ghidini, Gabriella, Milani, Antonella, Toia, Fabrizio, Piagge, Rossella, Di Biccari, Leonardo, Gevinti, Eleonora, Croce, Giuseppe, Andreini, Antonio   +10 more
openaire   +4 more sources

A new symmetric modular eleven‐level inverter using single and double source unit for low voltage applications with reduced number of switches

IET Power Electronics, EarlyView., 2023
This study introduces a new modular multilevel inverter that can produce five levels of positive voltage using only six power switches and five DC voltage sources. The basic unit is composed of a single‐ and double‐source (SDS) unit. SDS reduces the number of power electronic components, such as the insulated gate bipolar transistors, freewheeling ...
Naser Fakhri, Sara Laali, Mohammad Salay Naderi, Hossein Rahimi, Saeid Gholami Farkoush   +4 more
wiley   +1 more source

Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI

IEEE Journal of the Electron Devices Society, 2021
This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI ...
Cheng Li, Feilong Zhang, Chenkun Wang, Zijin Pan, Mengfu Di, Albert Wang   +5 more
doaj   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation

IEEE Journal of the Electron Devices Society, 2021
Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di, Zijin Pan, Cheng Li, Albert Wang   +3 more
doaj   +1 more source

Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors

IEEE Journal of the Electron Devices Society, 2023
The power-rail electrostatic discharge (ESD) clamp circuits have been widely used in CMOS integrated circuits (ICs) to provide effective discharging paths for on-chip ESD protection design. Among all ESD events, the most serious threat is posed to ICs by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

Investigating Graphene gNEMS ESD Switch for Design Optimization

IEEE Journal of the Electron Devices Society, 2021
Traditional in-Silicon PN-junction-based on-chip electrostatic discharge (ESD) protection structures have inherent ESD-induced design overhead problems, including parasitic capacitance, leakage and Si area consumption.
Cheng Li, Mengfu Di, Zijin Pan, Feilong Zhang, Qi Chen, Albert Wang   +5 more
doaj   +1 more source

Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network

Crystals, 2021
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Leaf relative water content at 50% stomatal conductance measured by noninvasive NMR is linked to climate of origin in nine species of eucalypt

Plant, Cell &Environment, Volume 46, Issue 12, Page 3791-3805, December 2023., 2023
Abstract Stomata are the gatekeepers of plant water use and must quickly respond to changes in plant water status to ensure plant survival under fluctuating environmental conditions. The mechanism for their closure is highly sensitive to disturbances in leaf water status, which makes isolating their response to declining water content difficult to ...
David Coleman, Carel W. Windt, Thomas N. Buckley, Andrew Merchant   +3 more
wiley   +1 more source

Generation of Terahertz Radiation via the Transverse Thermoelectric Effect

Advanced Materials, Volume 35, Issue 41, October 12, 2023., 2023
Intense terahertz radiation generation via the transverse thermoelectric effect in layered conducting transition metal oxides is demonstrated . Ultrafast out‐of‐plane temperature gradients, induced by femtosecond laser pulses on thin films grown on off‐cut substrates, launch in‐plane thermoelectric currents leading to efficient THz emission.
Petar Yordanov, Tim Priessnitz, Min‐Jae Kim, Georg Cristiani, Gennady Logvenov, Bernhard Keimer, Stefan Kaiser   +6 more
wiley   +1 more source