Results 21 to 30 of about 322 (148)
Quantitative TLP Waveform Analysis for GGNmosts
IEEE Journal of the Electron Devices Society, 2018 A method to extract internal physical quantities from transmission line pulse (TLP) waveforms of grounded gate nMOS electro-static discharge protections is presented.
Gijs J. De Raad
doaj +1 more source
InP Low‐Dimensional Nanomaterials for Electronic and Optoelectronic Device Applications: A Review
Advanced Sensor Research, Volume 2, Issue 10, October, 2023., 2023 Due to their suitable direct bandgap, high carrier mobility, and size‐dependent physical properties, low‐dimensional InP nanostructures have attracted great attention from scientists. In this Review, recent advances in low‐dimensional InP materials including synthetic methods, physical properties, and applications in electronics and optoelectronics are
Lin‐Qing Yue +6 more
wiley +1 more source
A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations
IEEE Journal of the Electron Devices Society, 2018 For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam +1 more
doaj +1 more source
Advanced Science, Volume 10, Issue 25, September 5, 2023., 2023 Here, for the first time, a highly effective graphdiyne/molybdenum (GDY/MoS2) type‐II heterojunction in a charge separation is reported toward a high‐performance photodetector. The device exhibits broadband detection (453–1064 nm) with a maximum responsivity of 78.5 A W−1 and a high speed of 50 µs.
Dinh Phuc Do +14 more
wiley +1 more source
Transmission line pulse based reliability investigations of HBTs [PDF]
, 1997 We propose transmission line pulse (TLP) stress instead of DC bias stress in order to stimulate different failure mechanisms for HBTs for wafer level reliability characterisation and show the effects of degradation on the device performance.
Brandt, M. +7 more
core +1 more source
Transmission line pulse stress on thick film resistors
, 2022 S.70-75One of the most important issues of resistors properties is the value stability under different electrical and non electrical influences. Mechanical and/or thermal stress together with the electrical one represents the main factors that have a ...
Gieser, H. +5 more
core +1 more source
IEEE Access, 2020 As semiconductor process continues to advance, the miniaturization of feature sizes places higher demands on high-failure electro-static discharge (ESD) applications.
Yang Wang +5 more
doaj +1 more source
, 2000 International audienceFor many years,design of robust ESD cell becomes critical due to the ever increasing density of technology process. This paper presents the main results of a numerical investigation of a Grounded Gate NMOS Transistor (GGNMOST) under
Galy, P. +7 more
core +4 more sources
, 2001 Transmission line pulsing (TLP) is a useful technique to characterize electrostatic discharge (ESD) events in semiconductor devices. The pulse waveforms generated by a typical TLP setup, however, are often distorted and oscillatory.
Young, R., Lee, Jui Chu, Liou, Juin J.
core +2 more sources
Deep sub-micron ESD GGNMOS layout design and optimization
MATEC Web of Conferences, 2018 In the field of integrated circuits, ESD (Electro Static Discharge) has always been a rather serious problem of reliability. Enhanced ESD tolerance of IC chips became a focus of research on IC failure protection design.
Jun Shi
doaj +1 more source