Results 11 to 20 of about 322 (148)
TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Crystals, 2020 For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu +5 more
doaj +2 more sources
Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI
IEEE Journal of the Electron Devices Society, 2021 This paper reports the design and analysis of scalable Sudoku-type diode-triggered silicon-controlled rectifier (DTSCR) electrostatic discharge (ESD) protection structures fabricated in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI ...
Cheng Li +5 more
doaj +1 more source
ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation
IEEE Journal of the Electron Devices Society, 2021 Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2023 The power-rail electrostatic discharge (ESD) clamp circuits have been widely used in CMOS integrated circuits (ICs) to provide effective discharging paths for on-chip ESD protection design. Among all ESD events, the most serious threat is posed to ICs by
Yi-Chun Huang, Ming-Dou Ker
doaj +1 more source
Investigating Graphene gNEMS ESD Switch for Design Optimization
IEEE Journal of the Electron Devices Society, 2021 Traditional in-Silicon PN-junction-based on-chip electrostatic discharge (ESD) protection structures have inherent ESD-induced design overhead problems, including parasitic capacitance, leakage and Si area consumption.
Cheng Li +5 more
doaj +1 more source
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
doaj +1 more source
Plant, Cell &Environment, Volume 46, Issue 12, Page 3791-3805, December 2023., 2023 Abstract Stomata are the gatekeepers of plant water use and must quickly respond to changes in plant water status to ensure plant survival under fluctuating environmental conditions. The mechanism for their closure is highly sensitive to disturbances in leaf water status, which makes isolating their response to declining water content difficult to ...
David Coleman +3 more
wiley +1 more source
Internal behavior of BCD ESD protection devices under TLP and very-fast TLP stress
, 2022 S.535-541BCD electrostatic discharge (ESD) protection npn devices with different layout variations are analyzed experimentally an by device simulation. The device internal thermal and free carrier density distributions during the transmission line pulse (
Gornik, E. +7 more
core +1 more source
EMP response modeling of TVS based on the recurrent neural network
Journal of Hebei University of Science and Technology, 2015 Due to the larger workload in the implementation process and the poor consistence between the test results and actual situation problems when using the transmission line pulse (TLP) testing methods, a modeling method based on the recurrent neural network
Zhiqiang JI +3 more
doaj +1 more source
Generation of Terahertz Radiation via the Transverse Thermoelectric Effect
Advanced Materials, Volume 35, Issue 41, October 12, 2023., 2023 Intense terahertz radiation generation via the transverse thermoelectric effect in layered conducting transition metal oxides is demonstrated . Ultrafast out‐of‐plane temperature gradients, induced by femtosecond laser pulses on thin films grown on off‐cut substrates, launch in‐plane thermoelectric currents leading to efficient THz emission.
Petar Yordanov +6 more
wiley +1 more source