Results 21 to 30 of about 11,441 (198)
InP Low‐Dimensional Nanomaterials for Electronic and Optoelectronic Device Applications: A Review
Advanced Sensor Research, Volume 2, Issue 10, October, 2023., 2023 Due to their suitable direct bandgap, high carrier mobility, and size‐dependent physical properties, low‐dimensional InP nanostructures have attracted great attention from scientists. In this Review, recent advances in low‐dimensional InP materials including synthetic methods, physical properties, and applications in electronics and optoelectronics are
Lin‐Qing Yue +6 more
wiley +1 more source
Advanced Science, Volume 10, Issue 25, September 5, 2023., 2023 Here, for the first time, a highly effective graphdiyne/molybdenum (GDY/MoS2) type‐II heterojunction in a charge separation is reported toward a high‐performance photodetector. The device exhibits broadband detection (453–1064 nm) with a maximum responsivity of 78.5 A W−1 and a high speed of 50 µs.
Dinh Phuc Do +14 more
wiley +1 more source
EMP response modeling of TVS based on the recurrent neural network
Journal of Hebei University of Science and Technology, 2015 Due to the larger workload in the implementation process and the poor consistence between the test results and actual situation problems when using the transmission line pulse (TLP) testing methods, a modeling method based on the recurrent neural network
Zhiqiang JI +3 more
doaj +1 more source
Small, Volume 19, Issue 38, September 20, 2023., 2023 A machine learning attack‐resilient ferroelectric true random number generator is demonstrated, unambiguously showing the enhanced stochasticity with near‐ideal randomness and reliable endurance against temperature variations. The attack‐resilient feature is confirmed using Fourier regressive model and long‐short‐term‐memory approach.
Yu‐Chieh Chien +5 more
wiley +1 more source
Rise-time effects in ggnMOSt under TLP stress [PDF]
, 1999 In this paper the main mechanisms that lead the turn on of the parasitic bipolar transistor of a grounded gate nMOS transistor (ggnMOS) under TLP stress have been analyzed in detail in the sub-nanoseconds range by means of a mixed-mode simulator.
Boselli, G., Kuper, F.G., Mouthaan, A.J.
core +5 more sources
Quantitative TLP Waveform Analysis for GGNmosts
IEEE Journal of the Electron Devices Society, 2018 A method to extract internal physical quantities from transmission line pulse (TLP) waveforms of grounded gate nMOS electro-static discharge protections is presented.
Gijs J. De Raad
doaj +1 more source
New Phytologist, Volume 239, Issue 2, Page 576-591, July 2023., 2023 Summary Water stress can cause declines in plant function that persist after rehydration. Recent work has defined ‘resilience’ traits characterizing leaf resistance to persistent damage from drought, but whether these traits predict resilience in whole‐plant function is unknown.
Claire Fortunel +17 more
wiley +1 more source
IET Generation, Transmission &Distribution, Volume 17, Issue 11, Page 2587-2599, June 2023., 2023 The proposed topology does not require a back‐end H‐bridge for the generation of negative polarity. This leads to a reduction in voltage stresses across the switches. Thus, total standing voltage (TSV) and the overall cost of the proposed topology are reduced as compared to the state‐of‐the‐art topologies reported in the literature.
Md Reyaz Hussan +5 more
wiley +1 more source
A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations
IEEE Journal of the Electron Devices Society, 2018 For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam +1 more
doaj +1 more source
IEEE Access, 2020 As semiconductor process continues to advance, the miniaturization of feature sizes places higher demands on high-failure electro-static discharge (ESD) applications.
Yang Wang +5 more
doaj +1 more source