Results 151 to 160 of about 2,904 (271)
DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC
, 2020 In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low.
Flavia Princess +3 more
core
Thermally Stable Organic Synaptic Transistors Using a High‐Tg Polymer Electret
Advanced Intelligent Systems, EarlyView.A high–glass‐transition‐temperature cyclic olefin copolymer (COC) electret enables thermally stable organic synaptic transistors for neuromorphic operation in harsh environments. UV–ozone treatment increases the trap density in COC, providing robust multilevel conductance and key synaptic functions (excitatory postsynaptic current/ inhibitory ...
Hoyoung Cho +9 more
wiley +1 more source
SiOx‐Based Probabilistic Bits Enabling Invertible Logic Gate for Cryptographic Applications
Advanced Intelligent Systems, EarlyView.To enable lightweight hardware encryption and decryption, a Ti/SiOx/Ti threshold switching device is engineered to generate controllable stochastic oscillations. By tuning the input voltage, the device produces a programmable spike probability governed by intrinsic switching dynamics, enabling probabilistic bits that construct an invertible ...
Jihyun Kim, Hyeonsik Choi, Jiyong Woo
wiley +1 more source
Advanced Intelligent Systems, EarlyView.This work presents a comprehensive framework bridging device fabrication, modeling, and system‐level simulation for an indium‐gallium‐zinc‐oxide (IGZO) charge‐trap synaptic transistor‐based neuromorphic system. By developing a precise SPICE model derived from fabricated IGZO synaptic transistors, the study incorporates parasitic RC loads into array ...
Yumin Yun +5 more
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
WO/2010/115856 Variable Barrier Tunnel Transistor
, 2010 The present invention provides a transistor device adapted to provide at least one tunnel barrier, controlled by an electrode, such that current flow in the transistor is minimised when the transistor is turned off and the current is maximized when the ...
Afzalian, Aryan, Colinge, Jean-Pierre
core
Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]
Discov NanoBae SJ +9 more
europepmc +1 more source
Angewandte Chemie International Edition, EarlyView.An improved low‐temperature synthesis enables the first comprehensive structural and spectroscopic characterisation of neutral hexacyanotrimethylenecyclopropane (CN6CP). Combined IR/Raman, UV–Vis and ssNMR analyses reveal a deeper understanding of its oxidation‐state‐dependent charge redistribution, σ‐aromaticity of the cyclopropane core, and redox ...
Jan P. Soyka +8 more
wiley +1 more source
Quantum Sensitive, Record Dynamic Range Terahertz Tunnel Field-Effect Transistor Detectors Exploiting Multilayer Graphene/hBN/Bilayer Graphene/hBN Heterostructures. [PDF]
Nano LettViti L +4 more
europepmc +1 more source