Results 181 to 190 of about 2,904 (271)
Small, EarlyView.Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li +6 more
wiley +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Small, EarlyView.An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 4, July 2026.The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang +7 more
wiley +1 more source
A Dialogue on Revolutions and Revolutionaries in Science: A Perspective From Quantum Mechanics
Natural Sciences, Volume 6, Issue 3, July 2026.ABSTRACT We discuss the notions of scientific revolutions and revolutionaries in the context of the Relativity Revolution and of the First, Second, and Third Quantum Revolutions. We conclude that at the core of the question of what qualifies as a revolution and revolutionary is an assessment of the gradients of knowledge accumulation over time, both at
Ron Folman, Bretislav Friedrich
wiley +1 more source
Deterministic Detection of Single Ion Implantation
Advanced Engineering Materials, Volume 28, Issue 11, 3 June 2026.Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source
Kinetic Regimes of Hydrogen Absorption in Thin Films
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco +7 more
wiley +1 more source
Advanced Healthcare Materials, Volume 15, Issue 21, 5 June 2026.This review highlights recent advances in smart face masks that actively monitor breathing. By integrating humidity, gas, temperature, pressure, strain, and triboelectric sensors, these masks track key respiratory parameters in real time. The article summarizes sensor mechanisms, compares performance across studies, and discusses challenges and future ...
Negin Faramarzi +7 more
wiley +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Memristive Physical Reservoir Computing
Advanced Science, Volume 13, Issue 33, 15 June 2026.Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source