Results 191 to 200 of about 125,060 (320)

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

Rare Metals, EarlyView.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang, Xiao‐Yue Liu, Te Xu, Jiang‐Wen Wang, Yuan‐Hong Shi, Shi‐Dai Tian, Xiang Zhang, Wei‐Guo Hu, Jun‐Yi Zhai   +8 more
wiley   +1 more source

Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]

Discov Nano
Cui G, Xu H.
europepmc   +1 more source

Flexible Electronics in Robotics Systems: From Devices to Applications

SmartBot, EarlyView.
This review presents the recent advancements in flexible electronics, and provides a systematic review of their integration and application in robotic systems. The review emphasizes the pivotal role flexible electronics plays in the field of intelligent robotics and outlines future development prospects for this promising technology. ABSTRACT The rapid
Xuyang An, Shumin Niu, Jiatai Chen, Xingyu Zhang, Jifan Zhang, Tiezhu Liu, Zhan Duan, Yinhua Hu, Dianpeng Qi, Jia Zhang, Xiaodong Chen   +10 more
wiley   +1 more source

Quantum Dot Thermal Machines-A Guide to Engineering. [PDF]

Entropy (Basel)
Pyurbeeva E, Kosloff R.
europepmc   +1 more source

Enhancing the Chemical Reactivity of Graphene through Substrate Engineering

Small, EarlyView.
This review highlights methods to enhance the reactivity of graphene through substrate engineering, focusing on strain and charge doping. Strains induced by nanoparticles, metal crystal orientations, or stretchable polymers increase the reactivity of graphene.
Jia Tu, Mingdi Yan
wiley   +1 more source

Preparation and Performance Exploration of MoS₂/WSe₂ Van Der Waals Heterojunction Tunneling Field-Effect Transistor. [PDF]

Micromachines (Basel)
Chong C, Liu H, Wang S, Chen S, Yan C.
europepmc   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Ge Pocket-Based Dual Gate Tunnel FET: A Label-Free Biosensor. [PDF]

ACS Omega
Wani MS, Khan A, Alharbi AG, Aldkeelalah SS, Loan SA.   +4 more
europepmc   +1 more source