Results 221 to 230 of about 125,060 (320)

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications. [PDF]

Sci Rep
Bashir F, Zahoor F, Alzahrani A, Abbas H.   +3 more
europepmc   +1 more source

Ice Lithography: Recent Progress Opens a New Frontier of Opportunities

Advanced Functional Materials, Volume 36, Issue 12, 9 February 2026.
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang, Gwendoline A. E. Anand, Rubaiyet Haque, Dylan A. Chiaro, Mona Sharma, Andrew R. Williams, Frank Niklaus, Daryl W. Yee, Gavin M. King, Anpan Han   +9 more
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Synaptic Plasticity Engineering for Neural Precision, Temporal Learning, and Scalable Neuromorphic Systems. [PDF]

Nanomicro Lett
Liu Z, Fang Y, Liu Q, Tian B, Zhao C.
europepmc   +1 more source

Momentum-dependent field-effect transistor. [PDF]

Sci Adv
Li Y, Li X, Zhao Z, Mei Z, Zhao B, Shu J, Zhou Y, Liang L, Li Q, Fan S, Chen X, Wei Y.   +11 more
europepmc   +1 more source

Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]

Micromachines (Basel)
Cui W, Liao P, Wang Y, Guo J, Yang Y, Zhang DW, Xu H.   +6 more
europepmc   +1 more source

Neuromorphic Floating-Gate Memory Based on 2D Materials. [PDF]

Cyborg Bionic Syst
Hu C, Liang L, Yu J, Cheng L, Zhang N, Wang Y, Wei Y, Fu Y, Wang ZL, Sun Q.   +9 more
europepmc   +1 more source

Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Lu B, Qiang H, Wang D, Cui X, Di J, Miao Y, Wang Z, Yu J.   +7 more
europepmc   +1 more source

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III–V heterostructure tunnel field-effect transistor

Journal of Physics: Condensed Matter, 2018
The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs.
C Convertino, C B Zota, H Schmid, A M Ionescu, K E Moselund   +4 more
openaire   +3 more sources

Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance

Semiconductor Science and Technology, 2022
The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO2 was taken as the ferroelectric material over an oxide layer (gate dielectric)
G. Gopal, H. Garg, H. Agrawal, T. Varma
semanticscholar   +1 more source