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Axial SiGe Heteronanowire Tunneling Field-Effect Transistors
Nano Letters, 2012We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV ...
Son T, Le +6 more
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Novel Tunnel Field Effect Transistors
This research aims to explore the complex challenges regarding reliability and scalability in Heterojunction Dual Gate Vertical Tunnel Field Effect Transistors (HJDGV-TFET). Specifically, it focuses on comparing the hetero buried and stacked buried configurations.P. Suveetha Dhanaselvam +3 more
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Tunneling Field Effect Transistor Technology
2016This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Zhang, Lining, Chan, Mansun
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Fabrication of epitaxial tunnel junction on tunnel field effect transistors
2019 19th International Workshop on Junction Technology (IWJT), 2019With an increase in the amount of collected and modified data in today’s "big data" era, the demand for calculation resources in both "cloud" and "edge" has also increased. Circuits consume high power when calculating large amount of data. Presently, advanced microchips consume over 100 W of power, which is a critical problem of realizing the big data ...
Y. Morita +3 more
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Silicene Nanoribbon Tunnel Field Effect Transistor
ECS Meeting Abstracts, 2016Scaling of metal oxide semiconductor field effect transistor (MOSFET) following the Moore’s law is approaching to its near end as the power dissipation at the chip level is becoming increasingly difficult to reduce [1]. The International Technology Roadmap for Semiconductors (ITRS) considers several non-classical devices as a future replacement of ...
Md S Fahad +4 more
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Tunnel Diodes and Field-Effect Transistors
2016The concept of quantum mechanical tunneling is introduced. Degenerate and nondegenerate semiconductors are defined and distinguished. Possibility of carrier tunneling across extremely thin depletion regions is explained. Operation of a tunnel diode is described in terms of its energy band diagram.
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Applications of resonant-tunneling field-effect transistors
IEEE Electron Device Letters, 1988Flip-flop and frequency-doubling operations are demonstrated, using a simple circuit that combines a resistor with a three-terminal negative-resistance device. The device is a series integration of resonant-tunneling heterostructure with a field-effect transistors. Results, obtained at 77 K, are presented for two samples that were grown by metalorganic
T.K. Woodward +3 more
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Nanowire Tunneling Field-Effect Transistors
2016Abstract Field-effect transistors based on band-to-band tunneling (TFETs) have recently attracted a great deal of interest. The strong interest stems from the fact that TFETs potentially allow the realization of transistors with superior switching behavior compared to conventional metal-oxide semiconductor FETs and hence allow reducing the ...
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