Results 221 to 230 of about 2,904 (271)

Junctionless Tunnel Field Effect Transistor

IEEE Electron Device Letters, 2013
In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor ...
Bahniman Ghosh
exaly   +2 more sources

Resonant tunneling field-effect transistors

Superlattices and Microstructures, 1988
We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode.
T.K. Woodward, T.C. McGill, R.D. Burnham, H.F. Chung   +3 more
openaire   +1 more source

Vertical Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2004
The realization of a novel vertically grown tunnel field-effect transistor (FET) with several interesting properties is presented. The operation of the device is shown by means of both experimental results as well as two-dimensional computer simulations. This device consists of a MBE-grown, vertical p-i-n structure. A vertical gate controls the band-to-
K.K. Bhuwalka, S. Sedlmaier, A.K. Ludsteck, C. Tolksdorf, J. Schulze, I. Eisele   +5 more
openaire   +1 more source

Tunnel field-effect transistors - update

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with ...
Alan Seabaugh, Hao Lu
openaire   +1 more source

SiGe Tunnel Field Effect Transistors

ECS Transactions, 2008
For conventional MOSFETs band-to-band tunnelling has to be avoided because it causes unintentional leakage currents. On the other hand the Tunnel FET, which basically consists of a gated pin-diode, takes advantage of tunnelling. The influence of technological parameters on device performance as well as scaling rules will be discussed.
Ignaz Eisele, Helmut Lochner, Martin Schlosser   +2 more
openaire   +1 more source

Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

Journal of Nanoscience and Nanotechnology, 2019
Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (Ion) is obtained. It is attributed to
Kitae, Lee, Junil, Lee, Sihyun, Kim, Euyhwan, Park, Ryoongbin, Lee, Hyun-Min, Kim, Sangwan, Kim, Byung-Gook, Park   +7 more
openaire   +2 more sources

A simulation study of vertical tunnel field effect transistors

2011 9th IEEE International Conference on ASIC, 2011
We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on.
Zhong-Fang Han, Guo-Ping Ru, Gang Ruan
openaire   +1 more source

Doping and Dopingless Tunnel Field Effect Transistor

2021 6th International Conference for Convergence in Technology (I2CT), 2021
For Low power consumption, an emerging device that depends on lowering the supply voltage with downscaling is proposed which is known as the Tunnel-FET (TFET). In general, MOSFETS (Metal Oxide Semiconductor Field Effect Transistors) is used for the low power transistors.
Prabhat Singh, Dip Prakash Samajdar, Dharmendra Singh Yadav   +2 more
openaire   +1 more source

III–V heterostructure tunnel field-effect transistor

Journal of Physics: Condensed Matter, 2018
Abstract The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs.
C Convertino, C B Zota, H Schmid, A M Ionescu, K E Moselund   +4 more
openaire   +2 more sources

Vertical Tunnel Field-Effect Transistor with Polysilicon Layer

Journal of Nanoscience and Nanotechnology, 2019
In this paper, a novel structure of tunnel field-effect transistors (TFETs) is proposed. The proposed device has an intrinsic polysilicon layer located in the overlap region between the source and the gate, which can increase the tunneling area and overcome the low ON-current drawback of the conventional TFET.
Won Joo, Lee, Hui Tae, Kwon, Hyun-Seok, Choi, Daehoon, Wee, Yu Jeong, Park, Boram, Kim, Yoon, Kim   +6 more
openaire   +2 more sources