Results 231 to 240 of about 125,060 (320)
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IEEE Transactions on Nanobioscience, 2022
Dielectric modulated (DM) field-effect transistors (FET) have gained significant popularity for label-free detection of biomolecules. However, the inherent short channel effects limit their sensitivity, scalability and energy-efficiency.
Dipanjan Sen +2 more
semanticscholar +1 more source
Dielectric modulated (DM) field-effect transistors (FET) have gained significant popularity for label-free detection of biomolecules. However, the inherent short channel effects limit their sensitivity, scalability and energy-efficiency.
Dipanjan Sen +2 more
semanticscholar +1 more source
International journal of numerical modelling, 2021
In this paper, a Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated.
N. Reddy, D. Panda
semanticscholar +1 more source
In this paper, a Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated.
N. Reddy, D. Panda
semanticscholar +1 more source
Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
Nature Nanotechnology, 2020The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore’s law reaching its limits, the development of alternative transistor architectures is urgently needed 1 ...
Seungho Kim +9 more
semanticscholar +1 more source
Design of bilayer graphene nanoribbon tunnel field effect transistor
Circuit world, 2021Purpose The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs). Design/methodology/approach To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material ...
Ramesh Kumar Vobulapuram +4 more
semanticscholar +1 more source
IEEE Sensors Journal, 2020
In this paper, a dielectrically modulated symmetrical double gate, having dual gate material, Tunnel Field-Effect transistor with Buried strained Si1-xGex source structure, has been investigated as a biosensor.
Aadil Anam, S. Anand, S. Amin
semanticscholar +1 more source
In this paper, a dielectrically modulated symmetrical double gate, having dual gate material, Tunnel Field-Effect transistor with Buried strained Si1-xGex source structure, has been investigated as a biosensor.
Aadil Anam, S. Anand, S. Amin
semanticscholar +1 more source
Doping and Dopingless Tunnel Field Effect Transistor
2021 6th International Conference for Convergence in Technology (I2CT), 2021For Low power consumption, an emerging device that depends on lowering the supply voltage with downscaling is proposed which is known as the Tunnel-FET (TFET).
Prabhat Singh, D. P. Samajdar, D. Yadav
semanticscholar +1 more source
IEEE Sensors Journal, 2020
In this paper, the structure of Core-Shell Junctionless Nanotube Tunnel Field Effect Transistor is proposed and investigated to minimize the fabrication steps and fabrication complexity of the device.
Shruti Shreya +4 more
semanticscholar +1 more source
In this paper, the structure of Core-Shell Junctionless Nanotube Tunnel Field Effect Transistor is proposed and investigated to minimize the fabrication steps and fabrication complexity of the device.
Shruti Shreya +4 more
semanticscholar +1 more source
IEEE transactions on nanotechnology, 2021
In this work, a negative capacitance tunnel FET (NCTFET) with the tunneling current in the normal direction to the gate is proposed with channel doping engineering and its electrical characteristics are investigated using TCAD simulations with calibrated
H. Kim, D. Kwon
semanticscholar +1 more source
In this work, a negative capacitance tunnel FET (NCTFET) with the tunneling current in the normal direction to the gate is proposed with channel doping engineering and its electrical characteristics are investigated using TCAD simulations with calibrated
H. Kim, D. Kwon
semanticscholar +1 more source
Resonant tunneling field-effect transistors
Superlattices and Microstructures, 1988We report an experimental project to incorporate double-barrier tunnel structures into three-terminal devices. These devices have the negative-differential-resistance (NDR) features of the double barrier, and the added flexibility of a third controlling electrode.
T.K. Woodward +3 more
openaire +1 more source
Junctionless Tunnel Field Effect Transistor
IEEE Electron Device Letters, 2013In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor ...
Bahniman Ghosh, Mohammad Waseem Akram
openaire +1 more source