Results 251 to 260 of about 125,060 (320)

Tunnel Field Effect Transistor for Ultra Low Power Applications: A Review

International Computer Science Conference, 2019
Tunnel Field Effect Transistor (TFET) has emerged as a promising candidate for applications in low power VLSI/ULSI circuit design. TFETs have shown better performance in terms of short-channel effects and random dopant fluctuation etc as compared to the ...
Km. Sucheta Singh, Satyendra Kumar, K. Nigam, V. Tikkiwal   +3 more
semanticscholar   +1 more source

Vertical Organic Tunnel Field-Effect Transistors

ACS Applied Electronic Materials, 2019
Doping organic semiconductors has become a key technology to increase the performance of organic light-emitting diodes, solar cells, or field-effect transistors (OFETs).
Shiyi Liu, Max L. Tietze, Akram Al-Shadeedi, Vikash Kaphle, Changmin Keum, Björn Lüssem   +5 more
openaire   +2 more sources

Graphene nanoribbon tunneling field effect transistors

Physica E: Low-dimensional Systems and Nanostructures, 2012
Abstract The electron-hole symmetry characteristic of graphene nanoribbons (GNRs) gives rise to the electron (hole) tunneling through valence (conduction) band states. By employing this property we have numerically investigated GNR field effect transistors with p + -type source and drain in the presence of a gate voltage-induced n -type channel ...
Hakimeh Mohamadpour, Asghar Asgari
openaire   +1 more source

Silicon nanowire tunneling field-effect transistors

Applied Physics Letters, 2008
We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using the vapor-liquid-solid growth method. The Si NWs contain p-i-n+ segments that were achieved by in situ doping using phosphine and diborane as the n- and p-type dopant source, respectively. Electrical measurements of the
M. T. Björk, J. Knoch, H. Schmid, H. Riel, W. Riess   +4 more
openaire   +1 more source

Effect of Raised Buried Oxide on Characteristics of Tunnel Field Effect Transistor

Silicon, 2022
S. Chander, S. K. Sinha
semanticscholar   +1 more source

Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS2 Three-Dimensional-Two-Dimensional Heterostructure.

ACS Applied Materials and Interfaces, 2018
We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS2. The resulting p-n heterojunction shows a staggered band alignment in which the quantum mechanical band-to-band tunneling ...
G. Shin, Bondae Koo, Hamin Park, Youngjun Woo, Jae Eun Lee, Sung‐Yool Choi   +5 more
semanticscholar   +1 more source

Lateral resonant tunneling field-effect transistor

Applied Physics Letters, 1988
A lateral resonant tunneling field-effect transistor (RTFET) is proposed. The RTFET has three closely spaced, but independent gate electrodes. The two outer gates create lateral double potential barriers in the channel, and control the barrier heights. The inner gate controls the potential of the quantum well between the barriers.
S. Y. Chou, J. S. Harris, R. F. W. Pease
openaire   +1 more source

Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

Silicon, 2021
S. Chander, S. K. Sinha, Rekha Chaudhary, Avtar Singh   +3 more
semanticscholar   +1 more source

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

Journal of Semiconductors, 2018
Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor (NC DG TFET) with a ferroelectric gate dielectric in this paper.
Huifang Xu
semanticscholar   +1 more source

Nanowire Tunneling Field-Effect Transistors

2016
Abstract Field-effect transistors based on band-to-band tunneling (TFETs) have recently attracted a great deal of interest. The strong interest stems from the fact that TFETs potentially allow the realization of transistors with superior switching behavior compared to conventional metal-oxide semiconductor FETs and hence allow reducing the ...
openaire   +1 more source