Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance [PDF]
Nature Communications, 2018 Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories.
Mengxing Wang +13 more
doaj +4 more sources
Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors [PDF]
Sensors, 2016 Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the ...
Ali Tavassolizadeh +6 more
doaj +3 more sources
AIP Advances, 2015 We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved.
B. Fang +4 more
doaj +2 more sources
Nature Communications, 2019 Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen +15 more
doaj +2 more sources
Giant Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction [PDF]
Nature CommunicationsCollinear antiferromagnetic (AFM) materials have the unique promise of no stray fields, displaying ultrafast dynamics, and being robust against perturbation fields which motivate the extensive research of antiferromagnetic spintronics.
Shijie Xu +25 more
doaj +2 more sources
Two-dimensional magnetic tunnel p-n junctions for low-power electronics [PDF]
Nature CommunicationsFor decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization
Wenkai Zhu +15 more
doaj +2 more sources
Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions [PDF]
, 2014 We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode.
Dayen, J. -F. +5 more
core +5 more sources
Room‐temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures [PDF]
InfoMatThe exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The
Haiyang Pan +11 more
doaj +2 more sources
Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit
NatureAntiferromagnetic spintronics1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid ...
Yuliang Chen, Haojie Zhang, Chi Fang
exaly +2 more sources
Proposal of Analog In-Memory Computing With Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell [PDF]
IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2021 In-memory computing (IMC) is an effective solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with an analog-to-digital converter (ADC) and simultaneously completes
Hao Cai +6 more
semanticscholar +1 more source