Results 11 to 20 of about 619,792 (270)
Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions [PDF]
2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), 2021 Antiferromagnetic spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics.
Jianting Dong +7 more
semanticscholar +2 more sources
Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles [PDF]
IEEE Transactions on Magnetics, 2015 In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily ...
Lai, Chih-Huang +4 more
core +6 more sources
Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode [PDF]
Physical review B, 2023 Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer.
Kartik Samanta +4 more
semanticscholar +1 more source
Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance [PDF]
Advances in Materials, 2023 Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density.
Jiacheng Shi +17 more
semanticscholar +1 more source
Applied Physics Letters, 2023 We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature (RT) using CoFe/MgO/CoFe(001) epitaxial magnetic tunnel junctions (MTJs). The TMR ratio increased up to 1143% at 10 K.
T. Scheike +3 more
semanticscholar +1 more source
Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
Applied Sciences, 2022 Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck +7 more
doaj +1 more source
NPG Asia Materials, 2022 Perpendicular magnetic anisotropy (PMA) is becoming increasingly important in spintronics research, especially for high-density magnetoresistive random access memories (MRAMs).
T. Nozaki +8 more
semanticscholar +1 more source
Mesoscopic tunneling magnetoresistance [PDF]
Physical Review B, 2001 5 pages, 3 eps figures included using epsf.sty. Revised text and improved notation, fig.
Usaj, Gonzalo, Baranger, Harold. U.
openaire +2 more sources
Electronic Materials, 2022 This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison.
Gunnar Suchaneck
doaj +1 more source
Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction
Nature, 2023 The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics
Xianzhe Chen +14 more
semanticscholar +1 more source