Results 31 to 40 of about 619,792 (270)
Tunnel anisotropic magnetoresistance in magnetic tunnel junctions using FeAlSi
AIP Advances, 2023 We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties at low temperature.
S. Akamatsu +6 more
doaj +1 more source
Direction inversion of spin-polarization current and exceptional tunnel magnetoresistance
AIP Advances, 2020 By the rate equation method in sequential and cotunneling regimes, we study the transport current and tunnel magnetoresistance through a single molecule magnet asymmetrically coupled to two collinear ferromagnetic electrodes.
NaiTao Xue +4 more
doaj +1 more source
Sensors, 2020 Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications.
Zhenhu Jin +4 more
doaj +1 more source
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias [PDF]
Journal of Applied Physics, 2018 We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of the soft ferromagnetic electrode, and the Ta dusting layer in the pinned electrode as well as their correlation with the tunnel ...
Orestis Manos +6 more
semanticscholar +1 more source
Theory of Tunnel Magnetoresistance
Journal of the Magnetics Society of Japan, 1998 We present a review of theories of tunnel magnetoresistance (TMR) putting an emphasis on the role of electron scattering due to randomness. We adopt the linear response theory and generalize the conductance formula to calculate the electrical conductance in layered structures.
Jun-ichiro Inoue, Hiroyoshi Itoh
openaire +3 more sources
Three-Dimensional Heterogeneous Bonding for High-Density and Low-Noise TMR Sensing Arrays. [PDF]
Adv Sci (Weinh)This study demonstrates a three‐dimensional heterogeneous bonding approach to fabricate compact TMR sensing units with double junction numbers and improved magnetic performance. Optimized Au─Au bonding and angled etching improve device integrity, noise characteristics, and magnetoresistance.
Han Z, Jin Z, Zhang C, Chen J.
europepmc +2 more sources
Sign of tunnel spin polarization of low-work-function Gd/Co nanolayers in a magnetic tunnel junction [PDF]
, 2008 Magnetic tunnel junctions having a low-work-function Gd/Co nanolayer at the interface with an Al2O3 tunnel barrier are shown to exhibit both positive and negative values of the tunnel magnetoresistance. The sign of the tunnel spin polarization of the Gd/
Jansen, R., Lodder, J.C., Min, B.C.
core +2 more sources
Tunneling anisotropic magnetoresistance driven by magnetic phase transition
Nature Communications, 2017 Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic ...
X. Z. Chen +18 more
doaj +1 more source
Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions
AIP Advances, 2022 Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability ...
Dongyan Zhao +10 more
doaj +1 more source
Magnetic memory driven by topological insulators
Nature Communications, 2021 It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device ...
Hao Wu +18 more
doaj +1 more source