Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses [PDF]
Sensors, 2022 A3B5 materials used for the superlattice (SL) fabrication have properties that enable the design of devices optimized for infrared (IR) detection. These devices are used in the military, industry, medicine and in other areas of science and technology ...
Tetiana Manyk +3 more
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Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice [PDF]
Light: Science & Applications, 2021 The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity.
Arash Dehzangi +2 more
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InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors [PDF]
Micromachines, 2020 The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 ...
David Z. Ting +8 more
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A Strain-Compensated InGaAs/InGaSb Type-II Superlattice Grown on InAs Substrates for Long-Wavelength Infrared Photodetectors [PDF]
NanomaterialsIn this paper, the first demonstration of a highly strained In0.8Ga0.2As/In0.2Ga0.8Sb type-II superlattice structure grown on InAs substrates by molecular beam epitaxy (MBE) for long-wavelength infrared detection was reported.
Hao Zhou, Chang Liu, Yiqiao Chen
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Novel Passivation Approach of InAs/GaSb Superlattice for Mid-Short Wavelength Dual-Color Infrared Detector [PDF]
Hangkong bingqi, 2021 For higher surface state density of InAs/GaSb type II superlattice materials, it is easy to form conductive oxide layer on the material surface. The first problem to be solved is passivation in the process of preparing infrared devices with InAs/GaSb ...
Zhang Lixue, Lu Xing, Zhu Xubo, Yao Guansheng
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Frontiers in Physics, 2022 Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures.
Shuiliu Fang +5 more
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Applied Sciences, 2022 We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them.
David Z. Ting +8 more
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The use of one-component plasma in the icp-rie etching process of periodic structures for applications in photodetector arrays [PDF]
Metrology and Measurement Systems, 2023 The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that ...
Marta Różycka +5 more
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Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
Results in Optics, 2021 Type-II InAs/GaSb superlattices (T2SLs) has drawn a lot of attention since it was introduced in 1970, especially for infrared detection as a system of multi-interacting quantum wells.
Manijeh Razeghi +2 more
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The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
Photonics, 2023 Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity.
Jiabo Liu +11 more
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