Results 11 to 20 of about 19,972 (281)

“N” structure for type-II superlattice photodetectors [PDF]

Applied Physics Letters, 2012
In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the “N structure.” N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing
Salihoglu, O., Muti, A., Kutluer, K., Tansel, T., Turan, R., Ergun, Y., Aydinli, A.   +6 more
openaire   +5 more sources

Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector

Applied Sciences, 2022
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet, Vignesh Arounassalame, Anthony Ramiandrasoa, Isabelle Ribet-Mohamed, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol   +6 more
doaj   +1 more source

Emergent topological states via digital (001) oxide superlattices

npj Computational Materials, 2022
Oxide heterostructures exhibit many intriguing properties. Here we provide design principles for inducing multiple topological states in (001) (A MO3)1/( $$AM^{\prime}$$ A M ′ O3)1 oxide superlattices.
Zhiwei Liu, Hongquan Liu, Jiaji Ma, Xiaoxuan Wang, Gang Li, Hanghui Chen   +5 more
doaj   +1 more source

Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes [PDF]

Journal of the European Optical Society-Rapid Publications, 2014
We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response
Giard E., Taalat R., Delmas M., Rodriguez J.-B., Christol P., Ribet-Mohamed I.   +5 more
doaj   +1 more source

Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate

Proceedings, 2019
The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 ...
Małgorzata Kopytko, Emilia Gomółka, Tetiana Manyk, Krystian Michalczewski, Łukasz Kubiszyn, Jarosław Rutkowski, Piotr Martyniuk   +6 more
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Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers [PDF]

, 1998
Due to its large band gap, AlSb is often used as a barrier in antimonide heterostructure devices. However, its transport characteristics are not totally clear. We have employed ballistic electron emission microscopy (BEEM) to directly probe AlSb barriers
Cheng, X.-C., McGill, T. C.
core   +1 more source

Type II superlattices for infrared detectors and devices [PDF]

, 1991
Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds.
Chow, D. H., Collins, D. A., McGill, T. C., Miles, R. H., Schulman, J. N.   +4 more
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Self-formation of InAs/InGaAsSb type-II superlattice structures on InP substrates by MBE and their application to mid-infrared LEDs

AIP Advances, 2022
InAs/InGaAsSb type-II superlattice structures (SLSs) were spontaneously formed by the molecular beam epitaxy of InAs/GaAs0.86Sb0.14 SLSs on InP substrates.
Kou Uno, Naoto Iijima, Naoya Miyashita, Koichi Yamaguchi   +3 more
doaj   +1 more source

Growth and characteristics of type-II InAs/GaSb superlattice-based detectors [PDF]

, 2011
We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design.
Gunapala, S. D., Höglund, L., Keo, S. A., Khoshakhlagh, A., Liao, A., Nguyen, J., Soibel, A., Ting, D. Z.   +7 more
core   +1 more source

Infrared Digital Focal Plane Arrays for Earth Remote Sensing Instruments

Proceedings, 2019
In this presentation, we will discuss the advantages of using an in-pixel digital read out integrated circuit and type-II strained layer superlattice detector array technology to elevate the operating temperature of the focal plane array for Earth remote
Sarath Gunapala, Sir Rafol, David Ting, Alexander Soibel, Arezou Khoshakhlagh, Sam Keo, Brian Pepper, Anita Fisher, Cory Hill, Edward Luong, Kwong-Kit Choi, Arvind D'Souza, Christopher Masterjohn, Sachidananda Babu, Parminder Ghuman   +14 more
doaj   +1 more source