Results 21 to 30 of about 19,972 (281)
Crystals, 2021 The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight ...
Wei-Lin Zhao +10 more
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Difference frequency generation by quasi-phase matching in periodically intermixed semiconductor superlattice waveguides [PDF]
, 2011 Wavelength conversion by difference frequency generation is demonstrated in domain-disordered quasi-phase-matched waveguides. The waveguide structure consisted of a GaAs/AlGaAs superlattice core that was periodically intermixed by ion implantation.
Aitchison, S.J. +6 more
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Long-wave bilayer graphene/HgCdTe based GBp type-II superlattice unipolar barrier infrared detector
Results in Optics, 2023 Type-II superlattice (T2SL) material is used to design highly efficient next-generation infrared (IR) detectors. The flexibility of the material allows the integration of unipolar barrier IR detector architecture to suppress generation-recombination ...
Shonak Bansal
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Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation
Photonics, 2020 In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices.
Arash Dehzangi +5 more
doaj +1 more source
Progress on MBE Grown Type-II Superlattice Photodiodes [PDF]
2006 Digest of the LEOS Summer Topical Meetings, 2006 We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of ...
Cory J. Hill +3 more
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Thiol passivation of MWIR type II superlattice photodetectors [PDF]
SPIE Proceedings, 2013 Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of
Salihoğlu, Ömer +2 more
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Type‐II GaAs/AlAs superlattices under high excitation [PDF]
physica status solidi (b), 1993 AbstractHigh‐intensity photoluminescence data on GaAs/AlAs superlattices and multi‐quantum wells of type‐II at low temperature are reported. The variation with density of the renormalized band gap reveals the competition between the Hartree energy, a consequence of non‐local neutrality, which tends to open the gap and the many‐body effects (mainly ...
Boujdaria, Kaïs +2 more
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Superconductivity in pressurized Rb0.8Fe2−ySe2−xTex
New Journal of Physics, 2015 We report the finding of pressure-induced elimination and reemergence of superconductivity in Rb _0.8 Fe _2− _y Se _2− _x Te _x ( x = 0, 0.19 and 0.28) superconductors that belong to the family of A-245 superconductors (A = K, Rb, TlRb and Cs ...
Dachun Gu +11 more
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Applied Sciences, 2022 Recent progress in Type-II strained layer superlattice (SLS) material systems has offered viable alternatives towards achieving large format, small-pitch, and low-cost focal plane arrays for different military and commercial applications. For focal plane
Arash Dehzangi
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Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
, 2018 Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism.
Aeberhard, Urs +2 more
core +1 more source