Results 21 to 30 of about 80,867 (311)

Calculation of the Density of the Distribution of Electronic States in the Conduction Band from the Fundamental Absorption Spectra of Amorphous Semiconductors

East European Journal of Physics, 2023
The region of fundamental absorption in the optical spectra of amorphous semiconductors is theoretically studied using the Davis-Mott approximation according to the Kubo-Greenwood formula.
Rustamjon G. Ikramov, Khurshidbek A. Muminov, Mashkhura A. Nuritdinova, Bobur Q. Sultonov, Oybek T. Kholmirzayev   +4 more
doaj   +1 more source

Valence band excitations in V_2O_5

Physical Review B, 1999
6 pages (revtex),6 figures (jpg)
Atzkern, S., Borisenko, S.V., Knupfer, M., Golden, M.S., Fink, J., Yaresko, A.N., Antonov, V.N., Klemm, M., Horn, S.   +8 more
openaire   +5 more sources

Dissociable effects of valence and arousal in adaptive executive control [PDF]

, 2011
Background: Based on introspectionist, semantic, and psychophysiological experimental frameworks, it has long been assumed that all affective states derive from two independent basic dimensions, valence and arousal.
Kuhbandner Christof, Zehetleitner, Michael, Kuhbandner, Christof, Zehetleitner Michael, Christof Kuhbandner, Michael Zehetleitner   +5 more
core   +1 more source

Electronic structure of Ag8GeS6

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017
For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations.
D.I. Bletskan, I.P. Studenyak, V.V. Vakulchak, A.V. Lukach   +3 more
doaj   +1 more source

Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

The Scientific World Journal, 2014
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems.
D. P. Samajdar, S. Dhar
doaj   +1 more source

A numerical study into the influence of quantum dot size on the sub-bandgap interband photocurrent in intermediate band solar cells

AIP Advances, 2013
A numerical study is presented of the sub-bandgap interband photon absorption in quantum dot intermediate band solar cells. Absorption coefficients and photocurrent densities are calculated for the valence band to intermediate band transitions using a ...
Alexander Mellor, Antonio Luque, Ignacio Tobías, Antonio Martí   +3 more
doaj   +1 more source

Valence-band hybridization in sulphides [PDF]

Physical Chemistry Chemical Physics
Valence-band hybridization in sulphides is studied with X-ray spectroscopy in experiment and theory. The admixture of the “atomic” states to the hybrid bands scales with their inverse energy separation, which we describe by a simple two-state model.
Lothar Weinhardt, Dirk Hauschild, Constantin Wansorra, Ralph Steininger, Monika Blum, Wanli Yang, Clemens Heske   +6 more
openaire   +4 more sources

Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate

Proceedings, 2019
The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 ...
Małgorzata Kopytko, Emilia Gomółka, Tetiana Manyk, Krystian Michalczewski, Łukasz Kubiszyn, Jarosław Rutkowski, Piotr Martyniuk   +6 more
doaj   +1 more source

PbTe Quantum Dots and Engineering of the Energy Band Alignment in Photovoltaic Applications

Süleyman Demirel Üniversitesi Fen-Edebiyat Fakültesi Fen Dergisi, 2021
Lead telluride (PbTe) quantum dots, despite being considered as one of the most promising candidates for future photovoltaics owing to their higher multiple exciton generation yields, have received limited attention in solar cell designs due their less ...
Tuğba Hacıefendioğlu, Demet Asil
doaj   +1 more source

Band Bending and Valence Band Quantization at Line Defects in MoS₂ [PDF]

ACS Nano, 2020
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but ...
Murray, Clifford, van Efferen, Camiel, Jolie, Wouter, Fischer, Jeison Antonio, Hall, Joshua, Rosch, Achim, Krasheninnikov, Arkady V., Komsa, Hannu Pekka, Michely, Thomas   +9 more
openaire   +6 more sources