Results 41 to 50 of about 80,867 (311)

Road Map of Semiconductor Metal-Oxide-Based Sensors: A Review

Sensors, 2023
Identifying disease biomarkers and detecting hazardous, explosive, flammable, and polluting gases and chemicals with extremely sensitive and selective sensor devices remains a challenging and time-consuming research challenge.
Taposhree Dutta, Tanzila Noushin, Shawana Tabassum, Satyendra K. Mishra   +3 more
doaj   +1 more source

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy [PDF]

, 2011
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface.
Guo, Yan, Liu, Xianglin, Yonghai Chen, Chen, Yonghai, Yan Guo, Wang, Zhanguo, Weifeng Zhang, Yang, Shaoyan, Caihong Jia, Shaoyan Yang, Chen, Y.(yhchen@semi.ac.cn), Jia, Caihong, Zhanguo Wang, Xianglin Liu, Zhang, Weifeng   +14 more
core   +1 more source

Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy

AIP Advances, 2015
The Al:ZnO/Cu2SnS3 semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy ...
Sandra Dias, S. B. Krupanidhi
doaj   +1 more source

Weak morphology dependent valence band structure of boron nitride

, 2013
We report a hard X-ray photoelectron spectroscopy (HX-PES) investigation on valence band structure of Boron Nitrides (BN) having different morphologies, including nanosheets, nanotubes, and micro-sized particles.
Golberg, Dmitri, Shigenori Ueda, Dmitri Golberg, Chunyi Zhi, Haibo Zeng, Xi Wang, Zhi, Chunyi, Xuebin Wang, Wei Tian, Wang, Xuebin, Zeng, Haibo, Tian, Wei, Bando, Yoshio, Yoshio Bando, Ueda, Shigenori, Wang, Xi   +15 more
core   +1 more source

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

AIP Advances, 2015
Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy.
Chee-Keong Tan, Nelson Tansu
doaj   +1 more source

Electronic structure and chemical bond nature in Cs2NpO2Cl4 [PDF]

Nuclear Technology and Radiation Protection, 2017
On the basis of the X-ray photoelectron spectroscopy data and results of theoretical calculations for the NpO2Cl4 (D4h) cluster, the electronic structure and the chemical bond nature in , was done in the binding Cs2NpO2Cl4 single crystal ...
Teterin Yury A., Maslakov Konstantin I., Ryzhkov Mikhail V., Teterin Anton Yu., Ivanov Kirill E., Kalmykov Stepan N., Petrov Vladimir G., Suglobov Dmitry N.   +7 more
doaj   +1 more source

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

AIP Advances, 2016
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition.
Wenyuan Jiao, Wei Kong, Jincheng Li, Kristen Collar, Tong-Ho Kim, Maria Losurdo, April S. Brown   +6 more
doaj   +1 more source

Valence band photoemission of Yb2.75C60

Acta Physica Sinica, 2004
Valence-band electronic density of states of Yb2.75C60 thin films was measured by the ultraviolet photoemission spectrum technique. The phase-pure Yb2.75C60 sample was characterized by the C 1s XPS measurements. The result indicates Yb2.75C60 has no Fermi edge and thus is semiconductor.
null Li Hong-Nian, null He Shao-Long, null Li Hai-Yang   +2 more
openaire   +1 more source

Revisiting Stability Criteria in Ball‐Milled High‐Entropy Alloys: Do Hume–Rothery and Thermodynamic Rules Equally Apply?

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
The stability criteria affecting the formation of high‐entropy alloys, particularly focusing in supersaturated solid solutions produced by mechanical alloying, are analyzed. Criteria based on Hume–Rothery rules are distinguished from those derived from thermodynamic relations. The formers are generally applicable to mechanically alloyed samples.
Javier S. Blázquez, Alejandro F. Manchón‐Gordón, Antonio Vidal‐Crespo, Rafael Caballero‐Flores, Jhon J. Ipus, Clara F. Conde   +5 more
wiley   +1 more source

Band Offsets from Angle‐Resolved Valence Band Photoemission Spectroscopy

Advanced Materials Interfaces
The conduction band offset ϕ0 at semiconductor surfaces and interfaces is a crucial parameter for quantum devices exploiting proximity‐induced collective states such as superconductivity and magnetism.
Procopios Constantinou, Maximilian Daschner, Hang Li, Fabiano Corsetti, Mohana Rajpalk, Samuel M. L. Teicher, Jan Gukelberger, Peter Krogstrup, Sergej Schuwalow, Vladimir N. Strocov, Gabriel Aeppli, Niels B. M. Schröter   +11 more
doaj   +1 more source