Results 31 to 40 of about 80,867 (311)

Analytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon

مجلة بغداد للعلوم, 2014
Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method.
Baghdad Science Journal
doaj   +1 more source

Electronic band structure and chemical bonding in trigonal Se and Te

AIP Advances, 2022
Herein, the electronic band structure and charge density distribution are theoretically studied in trigonal Se and Te to clarify the uncertainty stemming from the different views on the types of chemical bonding in their crystals and to reconsider the ...
V. G. Orlov, G. S. Sergeev
doaj   +1 more source

Experimental and theoretical study of the effect of bombardment with Ar+ ions on the spectrum of valence electrons of a Si (111) single crystal [PDF]

E3S Web of Conferences, 2021
The paper studies the effect of disordering of the surface layers on the electronic and optical properties of single-crystal silicon.An analysis of the photoelectron spectra shows that with complete amorphization of the surface density, the condition of ...
Ergashov Yokub, Umirzakov Boltaxodja, Nurmatov Nebodir, Otamurodov Golib   +3 more
doaj   +1 more source

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy [PDF]

, 2011
The valence band offset(VBO) of wurtzite indium nitride/strontium titanate(InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be1.26±0.23 eV and the conduction band offset is deduced to be1.
Liu, Xianglin, Biao Zhang, Li, Zhiwei, Wang, Zhanguo, Wang, Jun, Li, Z.(lizhiwei@semi.ac.cn), Liu, Jianming, Zhang, Biao, Yang, Shaoyan, Jun Wang, Shaoyan Yang, Qinsheng Zhu, Zhu, Qinsheng, Jianming Liu, Zhiwei Li, Zhanguo Wang, Xianglin Liu   +16 more
core   +1 more source

Valence Band Structure Engineering in Graphene Derivatives [PDF]

Small, 2021
AbstractEngineering of the 2D materials’ electronic structure is at the forefront of nanomaterials research nowadays, giving an advance in the development of next‐generation photonic devices, e‐sensing technologies, and smart materials. Herein, employing core‐level spectroscopy methods combined with density functional theory (DFT) modeling, the ...
Vladimir V. Shnitov, Maxim K. Rabchinskii, Maria Brzhezinskaya, Dina Yu. Stolyarova, Sergey V. Pavlov, Marina V. Baidakova, Aleksandr V. Shvidchenko, Vitaliy A. Kislenko, Sergey A. Kislenko, Pavel N. Brunkov   +9 more
openaire   +3 more sources

Valence band spin of semiconductor superlattices

Surface Science, 1992
Abstract Calculations are presented of the valence band structure of strongly coupled semiconductor superlattices. An unusual and unexpected spin behaviour is observed when a large magnetic field is applied along the superlattice direction. The superlattice dispersion of the + 3 2 state inversts at high field whereas the dispersion of the −
Warburton, R, Lawless, M, Nicholas, R
openaire   +1 more source

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Scientific Reports, 2023
The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied.
Oksana Yastrubchak, Nataliia Tataryn, Lukasz Gluba, Sergii Mamykin, Janusz Sadowski, Tomasz Andrearczyk, Jaroslaw Z. Domagala, Olga Kondratenko, Volodymyr Romanyuk, Olena Fedchenko, Yaryna Lytvynenko, Olena Tkach, Dmitry Vasilyev, Sergey Babenkov, Katerina Medjanik, Katarzyna Gas, Maciej Sawicki, Tadeusz Wosinski, Gerd Schönhense, Hans-Joachim Elmers   +19 more
doaj   +1 more source

A Blueprint for the Synthesis and Characterization of Thiolated Graphene

Nanomaterials, 2021
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community.
Maxim K. Rabchinskii, Victor V. Sysoev, Sergei A. Ryzhkov, Ilya A. Eliseyev, Dina Yu. Stolyarova, Grigorii A. Antonov, Nikolai S. Struchkov, Maria Brzhezinskaya, Demid A. Kirilenko, Sergei I. Pavlov, Mihail E. Palenov, Maxim V. Mishin, Olga E. Kvashenkina, Pavel G. Gabdullin, Alexey S. Varezhnikov, Maksim A. Solomatin, Pavel N. Brunkov   +16 more
doaj   +1 more source

Warping in the valence band of silicon [PDF]

Physical Review B, 2002
The origin of warping in the valence band of silicon is studied using tight-binding and $k\ensuremath{\cdot}p$ calculations. A number of new analytical expressions for the dispersion and effective masses are given. A measure of warping is also proposed.
Helmholz, D., Lew Yan Voon, Lok C.
openaire   +2 more sources

P-type zinc oxide spinels: application to transparent conductors and spintronics

New Journal of Physics, 2014
We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB $_{2}$ O $_{4}$ , where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied
Maria Stoica, Cynthia S Lo
doaj   +1 more source