Results 131 to 140 of about 1,850 (178)

Homoepitaxial growth of isotopically enriched h¹⁰BN layers on h¹¹BN crystals by high-temperature molecular beam epitaxy. [PDF]

NPJ 2D Mater Appl
Bradford J, Collins AFM, Cheng TS, Shen J, Kerfoot J, Rance GA, Li J, Mellor CJ, Beton PH, Cassabois G, Dai S, Edgar JH, Novikov SV.   +12 more
europepmc   +1 more source

Adjustable bandgap of a type-II AsP/SnS₂ van der Waals heterostructure using strain: outstanding electronic, optical, and photocatalytic properties. [PDF]

RSC Adv
Ren D, Wen Y, Zhou Z, Du M, Wang L, Yi J.   +5 more
europepmc   +1 more source

Van der Waals β-Ga₂O₃ thin films on polycrystalline diamond substrates. [PDF]

Nat Commun
Ning J, Yang Z, Wu H, Dong X, Zhang Y, Chen Y, Zhang X, Wang D, Hao Y, Zhang J.   +9 more
europepmc   +1 more source

Development of a ReaxFF Reactive Force Field for the Crystallization of van der Waals-Layered Bismuth Selenide. [PDF]

J Phys Chem C Nanomater Interfaces
Jeong GU, Morelock R, Bagchi S, Nayir N, van Duin ACT, Ganesh P.   +5 more
europepmc   +1 more source

Link between graphene features and the resulting functionality of quasi-van der Waals Zn₃P₂.

CrystEngComm
Hagger T, Rabelo Freitas H, Mastropasqua C, El Alouani A, Marinoni S, Kawashima N, Lemerle R, Wodzislawski KA, Dede D, Botti S, Spadaro MC, Piazza V, Michon A, Arbiol J, Fontcuberta I Morral A.   +14 more
europepmc   +1 more source

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Is all epitaxy on mica van der Waals epitaxy?

Materials Today Nano, 2022
N. Wang, X. Pan, P. Wang, Y. Wang, H. He, Y.-J. Zeng, L. Zhang, Y. Li, F. Wang, B. Lu, J. Huang, Z. Ye   +11 more
exaly   +2 more sources

van der Waals epitaxy: 2D materials and topological insulators

Applied Materials Today, 2017
Abstract van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies. The characteristics of VDWE include rotational alignment with the substrate, strain-free growth, and no misfit dislocations despite significant lattice
Lee A Walsh, Christopher L Hinkle
exaly   +2 more sources

Van der Waals epitaxy of tunable moirés enabled by alloying

Nature Materials, 2023
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible.
Matthieu Fortin-Deschênes, Kenji Watanabe, Takashi Taniguchi, Fengnian Xia   +3 more
openaire   +2 more sources

Ultrasharp interfaces grown with Van Der Waals epitaxy

Surface Science Letters, 1986
Abstract Van der Waals epitaxy, which we have recently developed, has opened a new way to fabricate many kinds of ultrathin heterostructures consisting of metals, semiconductors and insulators by using various transition metal dichalcogenide materials.
Atsushi Koma, Kazuki Yoshimura
openaire   +1 more source

Van der Waals epitaxy of metal dihalide

Applied Surface Science, 1997
Abstract Ultrathin layered metal dihalide films (PbI 2 , CdI 2 ) were grown on highly lattice mismatched (max. 44%) surfaces of several layered materials (LM's) and their growth features were studied by reflection high energy electron diffraction. Those metal dihalides grew epitaxially with their (0001) surfaces parallel to those of the substrates ...
Tetsuji Ueno, Hideki Yamamoto, Koichiro Saiki, Atsushi Koma   +3 more
openaire   +1 more source