Results 141 to 150 of about 1,850 (178)

van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS

ACS Applied Materials & Interfaces, 2023
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process.
Michael J. Moody, Joshua T. Paul, Paul J. M. Smeets, Roberto dos Reis, Joon-Seok Kim, Christopher E. Mead, Jonathan Tyler Gish, Mark C. Hersam, Maria K. Y. Chan, Lincoln J. Lauhon   +9 more
openaire   +2 more sources

Hybrid van der Waals Epitaxy

Physical Review Letters
The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the ...
Lin Hu, Danshuo Liu, Fawei Zheng, Xuelin Yang, Yugui Yao, Bo Shen, Bing Huang   +6 more
openaire   +2 more sources

Van der Waals Epitaxy of GaSe on GaAs(111)

MRS Proceedings, 1994
ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints.
L. E. Rumaner, F.S. Ohuchi
openaire   +1 more source

Band Lineup of Van Der Waals-Epitaxy Interfaces

MRS Proceedings, 1996
AbstractEpitaxial lattice mismatched heterointerfaces between layered semiconductors and themselves and II-VI semiconductors (CdS, CdTe), respectively, have been prepared and their band lineup determined by photoemission. Different physical mechanisms, which govern the heterointerface formation, can be discriminated due to the specific properties of ...
R. Schlaf, T. Löher, O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann   +5 more
openaire   +1 more source

van der Waals epitaxy of Ge films on mica

Journal of Applied Physics, 2017
To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the
A. J. Littlejohn, Y. Xiang, E. Rauch, T.-M. Lu, G.-C. Wang   +4 more
openaire   +1 more source

Thermodynamics and kinetics in van der Waals epitaxial growth of Te

Nanoscale
Chemical vapour deposition (CVD) in a tube furnace and molecular beam epitaxy (MBE) in a vacuum chamber represent the most effective methods for the production of low-dimensional nanomaterials.
Taotao Li, Wenjin Gao, Yongsong Wang, Tianzhao Li, Guoxiang Zhi, Miao Zhou, Tianchao Niu   +6 more
openaire   +2 more sources

Van der Waals Epitaxial Growth of α-Alumina Nanocrystals on Mica

Science, 1993
Lattice mismatch stresses, which severely restrict heteroepitaxial growth, are greatly minimized when thin alumina films are grown by means of van der Waals forces on inert mica substrates. A 10-nanometer-thick epitaxial film exhibits crystallographic sixfold symmetry, a lattice constant close to that of the basal plane [0001] of α-alumina (sapphire ...
S, Steinberg, W, Ducker, G, Vigil, C, Hyukjin, C, Frank, M Z, Tseng, D R, Clarke, J N, Israelachvili   +7 more
openaire   +2 more sources

Solution phase van der Waals epitaxy of ZnO wire arrays

Nanoscale, 2013
As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization.
Yue, Zhu, Yong, Zhou, Muhammad Iqbal Bakti, Utama, María, de la Mata, Yanyuan, Zhao, Qing, Zhang, Bo, Peng, Cesar, Magen, Jordi, Arbiol, Qihua, Xiong   +9 more
openaire   +2 more sources

Vertical Heterostructures of Layered Metal Chalcogenides by van der Waals Epitaxy

Nano Letters, 2014
We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (
Xingwang, Zhang, Fei, Meng, Jeffrey R, Christianson, Christian, Arroyo-Torres, Mark A, Lukowski, Dong, Liang, J R, Schmidt, Song, Jin   +7 more
openaire   +2 more sources

van der Waals epitaxy and photoresponse of two-dimensional CdSe plates

Nanoscale, 2016
Here we demonstrate the first growth of two-dimensional (2D) single-crystalline CdSe plates on mica substrates via van der Waals epitaxy. The as-synthesized 2D plates exhibit hexagonal, truncated triangular and triangular shapes with the lateral size around several microns.
Dan-Dan, Zhu, Jing, Xia, Lei, Wang, Xuan-Ze, Li, Li-Feng, Tian, Xiang-Min, Meng   +5 more
openaire   +2 more sources