Results 141 to 150 of about 1,875 (185)

Adjustable bandgap of a type-II AsP/SnS₂ van der Waals heterostructure using strain: outstanding electronic, optical, and photocatalytic properties. [PDF]

RSC Adv
Ren D, Wen Y, Zhou Z, Du M, Wang L, Yi J.   +5 more
europepmc   +1 more source

III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]

Microsyst Nanoeng
Kassem A, Gujrati R, Bourrier D, Ayela C, Mathieu F, Dufour I, Nicu L, Ottapilakkal V, Vuong P, Sundaram S, Hunt W, Ougazzaden A, Leichlé T, Salvestrini JP.   +13 more
europepmc   +1 more source

Link between graphene features and the resulting functionality of quasi-van der Waals Zn₃P₂.

CrystEngComm
Hagger T, Rabelo Freitas H, Mastropasqua C, El Alouani A, Marinoni S, Kawashima N, Lemerle R, Wodzislawski KA, Dede D, Botti S, Spadaro MC, Piazza V, Michon A, Arbiol J, Fontcuberta I Morral A.   +14 more
europepmc   +1 more source

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Is all epitaxy on mica van der Waals epitaxy?

Materials Today Nano, 2022
N. Wang, X. Pan, P. Wang, Y. Wang, H. He, Y.-J. Zeng, L. Zhang, Y. Li, F. Wang, B. Lu, J. Huang, Z. Ye   +11 more
exaly   +2 more sources

Van der Waals epitaxy of tunable moirés enabled by alloying

Nature Materials, 2023
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible.
Matthieu Fortin-Deschênes, Kenji Watanabe, Takashi Taniguchi, Fengnian Xia   +3 more
openaire   +2 more sources

Ultrasharp interfaces grown with Van Der Waals epitaxy

Surface Science Letters, 1986
Abstract Van der Waals epitaxy, which we have recently developed, has opened a new way to fabricate many kinds of ultrathin heterostructures consisting of metals, semiconductors and insulators by using various transition metal dichalcogenide materials.
Atsushi Koma, Kazuki Yoshimura
openaire   +1 more source

Van der Waals epitaxy of metal dihalide

Applied Surface Science, 1997
Abstract Ultrathin layered metal dihalide films (PbI 2 , CdI 2 ) were grown on highly lattice mismatched (max. 44%) surfaces of several layered materials (LM's) and their growth features were studied by reflection high energy electron diffraction. Those metal dihalides grew epitaxially with their (0001) surfaces parallel to those of the substrates ...
Tetsuji Ueno, Hideki Yamamoto, Koichiro Saiki, Atsushi Koma   +3 more
openaire   +1 more source

van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS

ACS Applied Materials & Interfaces, 2023
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process.
Michael J. Moody, Joshua T. Paul, Paul J. M. Smeets, Roberto dos Reis, Joon-Seok Kim, Christopher E. Mead, Jonathan Tyler Gish, Mark C. Hersam, Maria K. Y. Chan, Lincoln J. Lauhon   +9 more
openaire   +2 more sources

Hybrid van der Waals Epitaxy

Physical Review Letters
The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the ...
Lin Hu, Danshuo Liu, Fawei Zheng, Xuelin Yang, Yugui Yao, Bo Shen, Bing Huang   +6 more
openaire   +2 more sources

Van der Waals Epitaxy of GaSe on GaAs(111)

MRS Proceedings, 1994
ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints.
L. E. Rumaner, F.S. Ohuchi
openaire   +1 more source