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Growth of MoSe2 thin films with Van der Waals epitaxy
Journal of Crystal Growth, 1991Abstract The concept of Van der Waals epitaxy that has been recently introduced removes severe lattice matching requirement by using materials which only have strong bonding in two dimensions. We demonstrate that an epilayer of MoSe2 deposited on various substrates can produce films of high crystalline quality despite of large mismatch.
F.S. Ohuchi +4 more
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van der Waals epitaxy: 2D materials and topological insulators
Applied Materials Today, 2017Abstract van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies. The characteristics of VDWE include rotational alignment with the substrate, strain-free growth, and no misfit dislocations despite significant lattice
Walsh, Lee A., Hinkle, Christopher L.
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Growth of SnS van der Waals Epitaxies on Layered Substrates
MRS Proceedings, 2013ABSTRACTIn this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the ...
S.F. Wang +4 more
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Van der Waals epitaxy for highly lattice-mismatched systems
Journal of Crystal Growth, 1999One of the major obstacles to realize various kinds of heterostructures is the lattice matching between constituent materials. This difficulty has been proved to be overcome if one uses the interface having van der Waals nature. This kind of interface can be formed when a layered material is grown on a cleaved face of another layered material. Moreover,
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heterointerfaces prepared by Van der Waals epitaxy
Journal of Crystal Growth, 1995O. Lang +6 more
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Coaxial nanowires from van der Waals epitaxy
SPIE Newsroom, 2013Xiuling Li, Parsian Mohseni
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2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications
Nanomaterials, 2020Shifeng Wang, Annie Ng, Qing Hu
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Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling
Applied Materials Today, 2021Marc Heyns +2 more
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Passivation of Black Phosphorus via Self‐Assembled Organic Monolayers by van der Waals Epitaxy
Advanced Materials, 2017Li Shi, Yinghe Zhao, Qiang Li
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Defects in van der Waals Epitaxy of Topological Insulators
2019Morelhão, Sérgio L +4 more
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