Results 151 to 160 of about 1,875 (185)

Band Lineup of Van Der Waals-Epitaxy Interfaces

MRS Proceedings, 1996
AbstractEpitaxial lattice mismatched heterointerfaces between layered semiconductors and themselves and II-VI semiconductors (CdS, CdTe), respectively, have been prepared and their band lineup determined by photoemission. Different physical mechanisms, which govern the heterointerface formation, can be discriminated due to the specific properties of ...
R. Schlaf, T. Löher, O. Lang, A. Klein, C. Pettenkofer, W. Jaegermann   +5 more
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van der Waals epitaxy of Ge films on mica

Journal of Applied Physics, 2017
To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the
A. J. Littlejohn, Y. Xiang, E. Rauch, T.-M. Lu, G.-C. Wang   +4 more
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Thermodynamics and kinetics in van der Waals epitaxial growth of Te

Nanoscale
Chemical vapour deposition (CVD) in a tube furnace and molecular beam epitaxy (MBE) in a vacuum chamber represent the most effective methods for the production of low-dimensional nanomaterials.
Taotao Li, Wenjin Gao, Yongsong Wang, Tianzhao Li, Guoxiang Zhi, Miao Zhou, Tianchao Niu   +6 more
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Van der Waals Epitaxial Growth of α-Alumina Nanocrystals on Mica

Science, 1993
Lattice mismatch stresses, which severely restrict heteroepitaxial growth, are greatly minimized when thin alumina films are grown by means of van der Waals forces on inert mica substrates. A 10-nanometer-thick epitaxial film exhibits crystallographic sixfold symmetry, a lattice constant close to that of the basal plane [0001] of α-alumina (sapphire ...
S, Steinberg, W, Ducker, G, Vigil, C, Hyukjin, C, Frank, M Z, Tseng, D R, Clarke, J N, Israelachvili   +7 more
openaire   +2 more sources

Solution phase van der Waals epitaxy of ZnO wire arrays

Nanoscale, 2013
As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization.
Yue, Zhu, Yong, Zhou, Muhammad Iqbal Bakti, Utama, María, de la Mata, Yanyuan, Zhao, Qing, Zhang, Bo, Peng, Cesar, Magen, Jordi, Arbiol, Qihua, Xiong   +9 more
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Strained-Layer van der Waals Epitaxy in a Langmuir-Blodgett Film

Science, 1993
Atomic force microscope images of Langmuir-Blodgett films of lead and manganese fatty acid salts show that these monolayers have long-range order and are oriented with respect to the mica substrate, although the lattice symmetries of the monolayers and substrate are dramatically different.
R, Viswanathan, J A, Zasadzinski, D K, Schwartz   +2 more
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Vertical Heterostructures of Layered Metal Chalcogenides by van der Waals Epitaxy

Nano Letters, 2014
We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (
Xingwang, Zhang, Fei, Meng, Jeffrey R, Christianson, Christian, Arroyo-Torres, Mark A, Lukowski, Dong, Liang, J R, Schmidt, Song, Jin   +7 more
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van der Waals epitaxy and photoresponse of two-dimensional CdSe plates

Nanoscale, 2016
Here we demonstrate the first growth of two-dimensional (2D) single-crystalline CdSe plates on mica substrates via van der Waals epitaxy. The as-synthesized 2D plates exhibit hexagonal, truncated triangular and triangular shapes with the lateral size around several microns.
Dan-Dan, Zhu, Jing, Xia, Lei, Wang, Xuan-Ze, Li, Li-Feng, Tian, Xiang-Min, Meng   +5 more
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Van der Waals epitaxy of millimeter-domain Bi2Se3

Journal of Vacuum Science & Technology A
The unique electronic structure of Bi2Se3 makes it appealing not only for studying fundamental topological physics but also for pursuing technological applications that include future electronics, spintronics, and quantum computing. This work uses a chemical vapor deposition approach to synthesize submillimeter domain continuous epitaxial thin films as
Skye Williams, Saloni Pendse, Anshuman Thakral, Zonghuan Lu, Nimish Prashant, Neha Dhull, Ru Jia, Zhizhuo Liang, Zixu Wang, Denis Aglagul, Gwo-Ching Wang, Daniel Gall, Edwin Fohtung, Jian Shi   +13 more
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Multilayer A17 Black Antimonene via van der Waals Epitaxy

ACS Nano
Metastable layered antimony in the black phosphorus-like A17 phase exhibits promising electronic properties arising from pronounced spin-orbit coupling and suppressed phonon scattering. However, charge transport characterization has been severely constrained by insufficient crystal dimensions.
Yiyuan Ren, Zhuo Zhang, Yuan Lu, Nan Wu, Yinliang Tang, Yi Yu, Hung-Ta Wang   +6 more
openaire   +2 more sources