Results 151 to 160 of about 1,850 (178)

Strained-Layer van der Waals Epitaxy in a Langmuir-Blodgett Film

Science, 1993
Atomic force microscope images of Langmuir-Blodgett films of lead and manganese fatty acid salts show that these monolayers have long-range order and are oriented with respect to the mica substrate, although the lattice symmetries of the monolayers and substrate are dramatically different.
R, Viswanathan, J A, Zasadzinski, D K, Schwartz   +2 more
openaire   +2 more sources

Van der Waals epitaxy of millimeter-domain Bi2Se3

Journal of Vacuum Science & Technology A
The unique electronic structure of Bi2Se3 makes it appealing not only for studying fundamental topological physics but also for pursuing technological applications that include future electronics, spintronics, and quantum computing. This work uses a chemical vapor deposition approach to synthesize submillimeter domain continuous epitaxial thin films as
Skye Williams, Saloni Pendse, Anshuman Thakral, Zonghuan Lu, Nimish Prashant, Neha Dhull, Ru Jia, Zhizhuo Liang, Zixu Wang, Denis Aglagul, Gwo-Ching Wang, Daniel Gall, Edwin Fohtung, Jian Shi   +13 more
openaire   +1 more source

Multilayer A17 Black Antimonene via van der Waals Epitaxy

ACS Nano
Metastable layered antimony in the black phosphorus-like A17 phase exhibits promising electronic properties arising from pronounced spin-orbit coupling and suppressed phonon scattering. However, charge transport characterization has been severely constrained by insufficient crystal dimensions.
Yiyuan Ren, Zhuo Zhang, Yuan Lu, Nan Wu, Yinliang Tang, Yi Yu, Hung-Ta Wang   +6 more
openaire   +2 more sources

Growth of SnS van der Waals Epitaxies on Layered Substrates

MRS Proceedings, 2013
ABSTRACTIn this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the ...
S.F. Wang, W.K. Fong, W. Wang, K.K. Leung, C. Surya   +4 more
openaire   +1 more source

Growth of MoSe2 thin films with Van der Waals epitaxy

Journal of Crystal Growth, 1991
Abstract The concept of Van der Waals epitaxy that has been recently introduced removes severe lattice matching requirement by using materials which only have strong bonding in two dimensions. We demonstrate that an epilayer of MoSe2 deposited on various substrates can produce films of high crystalline quality despite of large mismatch.
F.S. Ohuchi, T. Shimada, B.A. Parkinson, K. Ueno, A. Koma   +4 more
openaire   +1 more source

heterointerfaces prepared by Van der Waals epitaxy

Journal of Crystal Growth, 1995
O. Lang, A. Klein, R. Schlaf, T. Löher, C. Pettenkofer, W. Jaegermann, A. Chevy   +6 more
openaire   +1 more source

Van der Waals epitaxy for highly lattice-mismatched systems

Journal of Crystal Growth, 1999
One of the major obstacles to realize various kinds of heterostructures is the lattice matching between constituent materials. This difficulty has been proved to be overcome if one uses the interface having van der Waals nature. This kind of interface can be formed when a layered material is grown on a cleaved face of another layered material. Moreover,
openaire   +1 more source

Coaxial nanowires from van der Waals epitaxy

SPIE Newsroom, 2013
Xiuling Li, Parsian Mohseni
openaire   +1 more source

Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling

Applied Materials Today, 2021
Wouter Mortelmans, Stefan De Gendt, Marc Heyns   +2 more
exaly  

Quasi van der Waals epitaxy nitride materials and devices on two dimension materials

Nano Energy, 2020
Dongdong Liang, Tongbo Wei, Junxi Wang   +2 more
exaly